WMSIC Electronic Components

BORN BESD5Z3.3C

ModelBESD5Z3.3C
PackageSOD-523
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN BESD5Z3.3C
Type
BORN
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
BESD5Z3.3C
Electronic Component
1
Package
SOD-523
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.027g
Electronic Component
1
Cj- Capacitor
12pF
Electronic Component
BM0263572179
Voltage
10V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
500uA
Voltage(VBR)
4.3V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BESD5Z3.3C 产品概述

一、产品简介

BESD5Z3.3C 是伯恩半导体(BORN)推出的一款双向硅雪崩型瞬态抑制器(ESD Protector),采用 SOD-523 超小封装,专为便携式与基于微处理器的终端设备提供高效的静电放电和浪涌保护。器件在 8/20μs 波形下可承受 100W 峰值脉冲功率,适用于空间受限且要求可靠防护的接口应用。

二、主要电气参数

  • 极性:双向
  • 反向截止电压 Vrwm:3.3V
  • 击穿电压 VBR:4.3V
  • 钳位电压:10V(典型)
  • 峰值脉冲电流 Ipp:10A
  • 峰值脉冲功率 Ppp:100W(tp = 8/20μs)
  • 反向漏电流 Ir:500μA
  • 结电容 Cj:12pF
  • 防护等级:满足 IEC 61000-4-2(空/接触放电 ±25kV)、IEC 61000-4-4、IEC 61000-4-5

三、特性与优势

  • 固态硅雪崩工艺,瞬态响应快且重复耐受能力强;
  • 低钳位电压,有效限制受保护节点电压,降低后级器件应力;
  • 低泄漏电流,在待机和低功耗系统中对电源与信号影响小;
  • 双向配置,适合差分或双向数据线的直接保护;
  • 超小 SOD-523 封装,便于高密度 PCB 布局与移动设备封装要求。

四、典型应用

  • 基于微处理器的终端设备与接口保护;
  • 个人数字助理 (PDA)、智能终端、可穿戴设备;
  • USB、串口、键盘/触摸屏等 I/O 保护(适用时请评估结电容对信号完整性的影响)。

五、封装与布局建议

  • 将器件尽量靠近被保护引脚放置,缩短导线与回流路径;
  • 对地回路应低阻抗、尽量避免长地线环路;
  • 对敏感高速信号评估 12pF 结电容带来的带宽影响,必要时与串联阻抗元件配合使用。

六、可靠性与合规性

器件符合 IEC 61000-4-2/4-4/4-5 等电磁兼容防护标准,在 ±25kV 空气与接触放电条件下具备良好防护能力。推荐在实际系统级测试中确认对特定接口和耦合条件的保护效果。

七、选型与使用注意事项

  • 若系统工作电压接近 3.3V,应确认 Vrwm 与误触发裕量;
  • 对极低泄漏或超高频应用,注意 500μA 漏电及 12pF 电容可能的影响;
  • 在严苛浪涌环境中,可考虑并联或串联配合其他防护元件以提升能量吸收能力。

BESD5Z3.3C 以其小尺寸、低钳位和高脉冲承受能力,适合用于对可靠性和空间有较高要求的便携与智能终端接口保护。

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