Model & package intelligence
Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
BORN BNPTVS15VS1UR
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN BNPTVS15VS1UR
- Type
- BORN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- BNPTVS15VS1UR
- Electronic Component
- 1
- Package
- SOD-123FL
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.037g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 1.02nF
- Electronic Component
- BM0258760004
- Voltage
- 32V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 500nA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BNPTVS15VS1UR 产品概述
一、概述
BNPTVS15VS1UR 为 BORN（伯恩半导体）出品的一款单向瞬态抑制二极管（TVS），采用 SOD-123FL 小型封装，专为对电源轨与接口线进行瞬态过压与静电放电（ESD）保护设计。器件满足 IEC 61000-4-2、IEC 61000-4-4 与 IEC 61000-4-5 等电磁兼容防护标准，兼顾体积、响应速度与脉冲承受能力，适用于消费类、工业与通信设备的局部防护方案。
二、关键电气参数
- 极性：单向（单向导通，适用于直流电源轨）
- 反向截止电压 Vrwm：15 V（最大连续工况耐压）
- 击穿电压 Vbr：约 16.7 V（典型）
- 钳位电压 Vc：32 V（在 8/20 μs 波形下）
- 峰值脉冲电流 Ipp：120 A（8/20 μs）
- 峰值脉冲功率 Ppp：3.8 kW（8/20 μs）
- 反向漏电流 Ir：500 nA（常温，典型极低）
- 结电容 Cj：1020 pF（较大，影响高速信号）
- 通道数：单路
三、特点与优势
- 高脉冲耐受：支持 120 A（8/20 μs）冲击电流与 3.8 kW 峰值功率，能有效吸收突发浪涌能量。
- 适配 15 V 轨：15 V Vrwm 与 ≈16.7 V 击穿确保在 12 V/15 V 供电系统中稳定工作并迅速钳位。
- 低漏电流：典型 500 nA，有利于节能与待机电流控制。
- 小尺寸封装：SOD-123FL 便于表面贴装与密集布局。
- 符合 IEC 抗扰标准：覆盖 ESD、EFT 与浪涌保护要求，提升系统可靠性。
四、典型应用场景
- 车载与工业 12 V/24 V 辅助电路的局部防护（注意需根据系统最高工作电压选型）。
- 电源输入端与模块间隔离保护。
- 接口保护（USB-A、串口、CAN 等低速接口），但因结电容较大，不推荐用于高速差分信号线（如 USB3.0、HDMI）。
- 家电、通信设备与测控仪器的浪涌与静电防护。
五、设计注意事项
- 布局：器件应尽量靠近被保护的连接器或 IC，焊盘短走线以降低感抗与延迟。
- 热管理：尽管脉冲能量大，但持续功率有限，避免在高占空比的脉冲环境长时间承受高能量。
- 与电路配合：若用于高速信号，需评估 1020 pF 的结电容对信号完整性的影响，可考虑并联串联阻抗匹配或选用低容型 TVS。
- 极性确认：单向器件只在反向（对地）时工作，正向相当于导通二极管，设计时须确保接法正确。
六、封装与可靠性
SOD-123FL 封装利于自动贴装与回流焊接，适合量产组装。器件在合适的焊接曲线与储存条件下可保证长期可靠性；在裸露环境或高湿度场合建议采取涂覆或密封措施。
如需样品测试或获取更详细的波形、热阻与封装机械图纸，可联系 BORN（伯恩半导体）或授权分销商获取完整数据表。
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