WMSIC Electronic Components

BORN ES1D

ModelES1D
PackageSMA(DO-214AC)
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN ES1D
Type
BORN
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
ES1D
Electronic Component
1
Package
SMA(DO-214AC)
Electronic Component
Fast Recovery / High-Efficiency Diode
Electronic Component
0.104g
Electronic Component
1
Electronic Component
BM0228551985
Current
1A
Current(Ir)
5uA@200V
(Vf)
950mV@1A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
5000
Voltage Rating(Vr)
200V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ES1D 产品概述 — BORN(伯恩半导体)SMA 快恢复二极管

一、产品简介

ES1D 为 BORN(伯恩半导体)出品的一款快恢复、高效率整流二极管,采用 SMA(DO-214AC)封装,面向通用电源整流、开关电源钳位与续流以及工业控制等场景。该器件额定整流电流为 1A,直流反向耐压 200V,具备良好的开关性能和较低的反向漏流,适合中等功率、需要兼顾开关损耗与热设计的应用。

二、主要参数概览

  • 工作结温范围:-55℃ ~ +150℃
  • 正向压降(Vf):0.95V @ IF = 1A
  • 直流反向耐压(Vr):200V
  • 反向电流(Ir):5µA @ Vr = 200V
  • 非重复峰值浪涌电流(Ifsm):30A
  • 反向恢复时间(Trr):35ns
  • 额定整流电流:1A
  • 封装:SMA (DO-214AC)
  • 品牌:BORN(伯恩半导体)

三、产品特性与优势

  1. 快恢复特性:Trr = 35ns,能显著降低在高频开关环境下的反向恢复相关损耗与电磁干扰(EMI),相比普通慢恢复二极管有更低的开关能耗。
  2. 较低正向压降:在 1A 电流下 Vf ≈ 0.95V,有利于减少导通损耗,提升整机效率。
  3. 合理的耐冲击能力:非重复峰值浪涌电流 Ifsm = 30A,可承受启动或故障时的瞬态浪涌(需注意热循环与重复冲击的限制)。
  4. 低漏电流:Ir = 5µA @ 200V,适合反向电压较高且对待机功耗有要求的电路。
  5. 宽工作结温:-55℃ 到 +150℃,适应苛刻环境与工业温度级应用。
  6. 紧凑封装:SMA 封装便于自动化贴装,兼容常见 PCB 布局与空间受限设计。

四、典型应用场景

  • 开关电源(SMPS)的续流/整流二极管
  • 适配器与充电器的输出整流
  • 反并联钳位和浪涌吸收电路
  • 电机驱动与工业控制中的续流保护
  • DC-DC 转换模块与反向电压保护
  • 消费电子与照明驱动电源中的通用整流

五、设计与使用建议

  • 热设计与散热:尽管器件额定结温较高,但在连续 1A 工作或存在脉冲浪涌时,需做好 PCB 散热设计。建议增加铜箔面积、合理布置散热通道,并避免在高温环境下长期满载运行。
  • 反向漏流与温度:反向漏流随温度升高而上升,设计时应考虑高温工况下 Ir 的增加,必要时留有安全裕度。
  • 浪涌能力:Ifsm = 30A 能应对短时浪涌,但重复或长时间浪涌会导致结温快速上升,需配合熔断保护或限流电路使用。
  • 开关损耗与布局:在高频开关应用中,合理缩短二极管到开关器件之间的走线,减小寄生电感,可进一步降低开关应力与振铃。
  • 焊接工艺:采用标准 SMA 封装的 SMT 焊接流程,遵循厂商推荐的回流曲线与预热参数,避免过高峰值温度或超长保温时间对封装造成应力。

六、可靠性与注意事项

  • 使用时避免超过额定结温与最大反向电压,持续超额工作会降低器件寿命。
  • 对于对待机功耗极为敏感的系统,可关注在高温下的反向漏流变化,必要时选择更低漏电的器件或并联保护电路。
  • 在有较强浪涌或脉冲能量的应用(例如反复启动的电机)中,应评估器件的热应力与循环疲劳,考虑备用的保护与散热策略。

七、总结

BORN ES1D(SMA 封装)是一款面向中等功率整流与开关应用的快恢复二极管,兼顾了较低正向压降、快速反向恢复和较高的耐压与浪涌能力。其 200V 耐压与 1A 额定电流使其在适配器、开关电源、工业控制及一般整流场景中具有良好性价比。设计时应关注热管理、浪涌保护与高温漏电特性,以确保长期可靠运行。若需更详细的封装、焊接和热参数,请参考 BORN 提供的完整技术资料与应用手册。

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