WMSIC Electronic Components

BORN US1M

ModelUS1M
PackageSMA
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN US1M
Type
BORN
Minimum package
5000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
US1M
Electronic Component
1
Package
SMA
Electronic Component
Fast Recovery / High-Efficiency Diode
Electronic Component
0.138g
Electronic Component
1
Electronic Component
BM0230041445
Current
1A
Current(Ir)
10uA
(Vf)
1.7V@1A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
5000
Voltage Rating(Vr)
1kV

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

US1M 产品概述

一、产品简介

US1M 是 BORN(伯恩半导体)推出的一款快恢复/高效率二极管,采用 SMA 封装(对应常见的 DO-214AC 贴片封装),面向高压整流与开关应用。器件在 1A 工作电流条件下正向压降约为 1.7V,直流反向耐压可达 1kV,反向漏电流在 1kV 时典型约 10µA,反向恢复时间 Trr 为 75ns,能承受非重复峰值浪涌电流 30A,工作结温范围为 -55℃ 至 +150℃(Tj)。

二、主要电气参数

  • 正向压降 (Vf):1.7V @ 1A
  • 直流反向耐压 (Vr):1000V
  • 直流整流电流:1A
  • 反向恢复时间 (Trr):75ns
  • 反向漏电流:10µA @ 1kV(典型)
  • 非重复峰值浪涌电流 (Ifsm):30A
  • 工作结温:-55℃ ~ +150℃
  • 封装:SMA(表面贴装)

三、特点与优势

  • 高耐压能力:1000V 反向耐压适合高压整流与阻断应用。
  • 快恢复特性:75ns 的反向恢复时间可降低开关损耗和结电荷积累,适合中速开关场合。
  • 低反向漏电:在高压条件下仍维持较低的漏电,有利于高压电源和待机功耗控制。
  • 紧凑封装:SMA 封装便于自动贴装、节省 PCB 面积,适合批量生产与小型电源模块。

四、典型应用场景

  • 开关电源(SMPS)高压整流与续流二极管
  • 高压电源、升压转换器、反激/前端整流
  • 工业电源、显示驱动及高压驱动电路
  • 作为限幅、钳位或吸收回路中需要高压耐受与中速恢复的元件

五、使用建议与注意事项

  • 散热管理:尽管平均整流电流为 1A,长时间工作时需关注 PCB 散热与环境温度,必要时通过铜箔散热或散热器降低结温。
  • 开关过渡与 EMI:75ns 的恢复时间属于快恢复级别,但在高速、高频应用仍可能产生开关突变造成 EMI,建议配合 RC 阻尼、斜率控制或吸收网络优化。
  • 布局要点:走短、宽的回流和散热铜箔可降低寄生电感与热阻;封装焊盘按厂家推荐尺寸设计以保证可靠焊接。
  • 焊接与储存:遵循供应商的回流曲线与湿敏等级(MSL)要求,避免长时间潮湿环境存放并按标准回流工艺进行贴装。

六、封装与选型参考

SMA(DO-214AC)封装便于自动化贴片与回流焊接,适合空间受限的功率模块。若应用要求更低的正向压降或更短的反向恢复时间,可考虑 Schottky 或超快恢复二极管家族;若电流等级或耐浪涌要求更高,应选用更大封装或并联设计。

总结:US1M 在 1A 级别的高压整流与中速开关场合提供了良好的耐压、恢复特性与封装便利性,是高压低至中功率电源与保护回路的实用选择。购买与设计前建议参考 BORN 官方数据手册获取完整的典型曲线与封装尺寸。

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