WMSIC Electronic Components

BORN PESD12VS2UT-N

ModelPESD12VS2UT-N
PackageSOT-23
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN PESD12VS2UT-N
Type
BORN
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
PESD12VS2UT-N
Electronic Component
1
Package
SOT-23
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.032g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
60pF
Electronic Component
BM0264577789
Voltage
30V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
500nA
Voltage(VBR)
15V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PESD12VS2UT-N 双路TVS二极管产品概述

一、产品定位与核心作用

PESD12VS2UT-N是伯恩半导体(BORN)推出的双路瞬态电压抑制(TVS)二极管,核心定位为低电压电路的ESD(静电放电)、EFT(电快速瞬变脉冲群)及浪涌干扰防护。作为专用防护器件,其通过快速雪崩击穿机制,将瞬态过压钳位在安全范围内,避免后端敏感电子元件(如MCU、传感器、通信芯片)因过压损坏,是消费电子、物联网、工业控制等领域的通用防护方案。

二、关键电气参数深度解析

器件的核心性能由以下参数决定,需结合应用场景精准匹配:

1. 电压相关参数

  • 反向截止电压(Vrwm):12V
    反向偏置下不导通的最大连续工作电压,适配3.3V、5V等≤12V的低电压电路,确保正常工作无额外干扰。
  • 击穿电压(Vbr):15V
    反向击穿起始电压,比Vrwm高3V,既防止正常工作误触发,又能在过压(≥15V)时快速启动防护。
  • 钳位电压(Vc):30V
    峰值脉冲下的最高电压限制,直接决定防护效果——过压时将电压钳在30V以内,保护后端器件(如MCU最大耐压通常≤3.6V/5V,30V已远低于其损坏阈值)。

2. 功率与电流参数

  • 峰值脉冲功率(Ppp):300W@8/20μs
    承受的最大瞬态功率,测试波形为IEC 61000-4-5标准浪涌(前沿8μs、半峰值20μs),覆盖大多数消费电子、工业设备的浪涌防护需求(如家庭电源浪涌通常≤200W)。
  • 反向漏电流(Ir):500nA
    反向截止时的漏电流,数值极低,不影响低功耗电路(如电池供电的物联网节点,待机电流通常≤1μA)的待机性能。

3. 其他关键参数

  • 结电容(Cj):60pF
    双路集成后的结电容,兼容USB2.0(最高速率480Mbps)、I2C、SPI等低速/中速信号,避免信号上升沿/下降沿失真(高速信号如USB3.0需更低结电容,但该器件适配主流低速场景)。
  • 通道数:双路
    单封装内置两路独立防护单元,可同时防护两路信号(如I2C的SDA/SCL)或“电源+信号”,节省PCB空间与BOM成本(无需采购两个单路器件)。

三、防护性能与国际标准兼容

该器件完全兼容IEC 61000-4系列核心防护标准,覆盖电子设备面临的三类主要瞬态干扰:

  1. IEC 61000-4-2(ESD):承受接触放电±8kV、空气放电±15kV,防护人体触摸、设备间接触产生的静电冲击;
  2. IEC 61000-4-4(EFT):应对电源/信号线上的快速脉冲干扰(如开关切换、电机启动产生的瞬变),防护等级达±2kV/5kHz;
  3. IEC 61000-4-5(浪涌):抑制雷电感应、电源开关浪涌等大能量瞬态干扰,防护等级满足±2kV(线对地)、±1kV(线对线)需求。

四、封装与可靠性设计

采用SOT-23贴片封装,尺寸约1.6mm×2.9mm×1.1mm,属于小型化封装,适配高密度PCB设计(如智能手机、可穿戴设备的主板)。封装可靠性方面:

  • 支持回流焊、波峰焊等标准SMT工艺,焊接兼容性好(焊接温度峰值≤260℃);
  • 工作温度范围:-55℃150℃,经过高低温循环(-55℃150℃,1000次)、湿度老化(85℃/85%RH,1000h)测试,满足工业级或消费级设备的长期使用需求;
  • 重复防护能力强,上千次瞬态冲击后,反向漏电流、钳位电压无明显衰减。

五、典型应用场景

结合参数与防护能力,该器件适用于以下场景:

  1. 消费电子终端:智能手机耳机接口、平板I2C传感器(如距离传感器)、智能手表充电口防护;
  2. 物联网(IoT)节点:户外温湿度传感器的电源与UART通信接口、智能家居开关的控制端口防护;
  3. 工业控制设备:PLC的数字输入输出(DI/DO)端口、低电压模拟量接口(如4-20mA传感器)防护;
  4. 计算机外设:键盘/鼠标的USB接口、电源端口防护,防止静电损坏主控芯片;
  5. 车载辅助电路:车载USB充电口、胎压监测传感器(TPMS)的通信接口防护(需确认车规认证,若满足则适配车载场景)。

六、选型优势总结

对比同类单路TVS或多路分立防护方案,PESD12VS2UT-N具有以下核心优势:

  1. 集成化双路防护:单封装两路防护,减少PCB布线复杂度,降低BOM成本(比采用两个单路器件节省约30%的空间与成本);
  2. 全场景EMC覆盖:无需额外搭配压敏电阻、气体放电管等器件,简化防护设计,缩短研发周期;
  3. 低功耗兼容:500nA反向漏电流,适配电池供电设备(如智能手环),不影响待机时长;
  4. 信号完整性平衡:60pF结电容兼顾防护性能与低速信号传输,避免信号失真;
  5. 成熟供应链:伯恩半导体成熟产品,封装通用易采购,生产一致性好(批次间参数偏差≤5%)。

该器件凭借高性价比与全面防护能力,成为低电压电路防护的优选方案,可有效提升电子设备的可靠性与抗干扰能力,降低售后返修率。

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