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BORN 2SC2412
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN 2SC2412
- Type
- BORN
- Minimum package
- 3000 未知
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- 2SC2412
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0231019416
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SC2412 产品概述
一、概述
2SC2412 是 BORN（伯恩半导体）推出的一款小信号 NPN 晶体管，采用 SOT-23 小型封装，针对低功耗、高增益与中等电压应用优化。器件支持集电极电流最大 150mA，集射极击穿电压 Vceo 为 50V，适合便携与空间受限电路中的开关与放大场景。
二、主要参数
- 晶体管类型：NPN
- 最大集电极电流 Ic：150mA
- 集射极击穿电压 Vceo：50V
- 最大耗散功率 Pd：225mW（常温条件）
- 直流电流增益 hFE：约 120（测试条件 1mA、VCE=6V）
- 特征频率 fT：300MHz，适合高频小信号处理
- 集电极截止电流 Icbo：100nA（典型，室温）
- 集电极饱和电压 VCE(sat)：约 400mV（视偏置条件而定）
- 射基极击穿电压 Vebo：7V
- 工作温度范围：-55℃ 至 +150℃
- 封装：SOT-23
三、性能与特性
2SC2412 在小电流区具有较高的直流增益，hFE≈120（1mA）便于低电流放大；fT 达 300MHz，确保在 VHF/高频前级和射频耦合电路中保持良好响应。低 Icbo（100nA）带来较小的漏电流，有利于高阻输入或休眠电路的低漏流表现。SOT-23 封装体积小、布局灵活，但热阻较大，需注意功耗与散热。
四、典型应用
- 小信号放大器、前置放大和电压跟随器
- 通用开关与驱动（驱动小继电器、LED、光电器件）
- 高频放大、振荡与混频电路的增益级
- 便携设备与电池供电系统中的信号处理模块
五、使用建议与封装注意
- 耗散功率 225mW 为常温额定值，实际使用中应根据环境温度线性降额，避免在高温下持续接近最大耗散。
- SOT-23 封装热阻较大，建议在 PCB 布局时增加散热铜箔面积或热铜垫，减少结温上升。
- VCE(sat) 与 hFE 随工作点变化明显，设计饱和开关或线性放大电路时应按目标工作电流和偏置重新计算。
- 引脚定义与封装脚位请参照厂方完整数据手册，器件引脚排列厂商可能有所差异。
- 存储与装配过程中注意静电防护（ESD），并遵循湿敏等级与回流焊工艺规范。
六、选型参考
如果需要更高电流或更低饱和压，建议选用更大封装或低 VCE(sat) 的功率型晶体管；若目标为极低噪声或专用射频性能，可比较低噪声放大器或专用 RF 三极管。2SC2412 在中等电压、高频与低电流场合表现均衡，是通用小信号放大与开关的可靠选择。
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