Model & package intelligence
Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
BORN NUP4114HMR6T1G-N
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN NUP4114HMR6T1G-N
- Type
- BORN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- NUP4114HMR6T1G-N
- Electronic Component
- 1
- Package
- SOT23-6
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.04g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 0.2pF；0.36pF
- Electronic Component
- BM0264602956
- Voltage
- 13V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 500nA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
NUP4114HMR6T1G-N 产品概述
一、简介
NUP4114HMR6T1G-N（BORN 伯恩半导体）是一款单路单向瞬态抑制二极管（TVS），采用固态硅雪崩工艺，封装为 SOT23-6。该器件针对快速瞬态干扰与浪涌事件提供保护，符合 IEC 61000-4-2、4-4、4-5 等抗扰度标准，适用于以太网、DVI 与数字视频接口等高速信号链路的浪涌与静电防护。
二、主要电气参数
- 极性：单向（单路）
- 反向额定电压 Vrwm：5 V
- 击穿电压 VBR：约 8.5 V
- 钳位电压（典型）：13 V
- 峰值脉冲电流 Ipp：3.5 A（8/20 μs）
- 峰值脉冲功率 Ppp：60 W（8/20 μs）
- 反向漏电流 Ir：500 nA（典型/最大视工况）
- 结电容 Cj：典型 0.3 pF（IO到IO）；规格中另列 0.2 pF / 0.36 pF（视测试条件）
三、特性亮点
- 低钳位电压：在浪涌事件中有效限制被保护线路电压，降低下游器件应力。
- 低泄漏电流：有利于电源与高阻抗节点长期稳定工作。
- 低结电容：对高速差分信号影响小，适合高速数据接口的并联防护。
- 高峰值功率吸收能力：60 W（8/20 μs）满足常见浪涌场景下的能量吸收需求。
- 符合多项IEC抗扰标准，可靠性高。
四、典型应用
- 以太网物理层接口（PHY、电缆接口）
- 数字视频接口（DVI、HDMI）与差分信号线保护
- USB、串口等需要低电容保护的高速接口
- 工业控制与消费电子中要求静电与浪涌保护的输入端
五、封装与布局建议
- 封装：SOT23-6，体积小，便于贴片安装。
- PCB 布局：将 TVS 尽可能靠近需要保护的连接器或器件并采用短铜迹与低寄生电感；必要时在地与信号侧布置独立回流路径以降低干扰。
- 焊接与回流：遵循 SOT23-6 封装的回流工艺规范，避免过热导致器件特性变化。
六、选型与注意事项
- 若系统对差分对匹配与插入损耗极为敏感，请参考实际测得的 Cj 值与频域影响；对于更高能量需求，可考虑功率等级更高的替代品。
- 在高温或持续脉冲工况下，注意器件散热与热递减影响，确保工作环境与应用场景在器件规格范围内。
如需样片、详细 Datasheet 或在特定应用中的仿真与布局协助，可提供进一步支持与应用方案。
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