WMSIC Electronic Components

BORN TPD4E1U06DCK-N

ModelTPD4E1U06DCK-N
PackageSOT-363
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN TPD4E1U06DCK-N
Type
BORN
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
TPD4E1U06DCK-N
Electronic Component
1
Package
SOT-363
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.032g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.5pF;0.25pF
Electronic Component
BM0258885490
Voltage
18V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
50nA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

TPD4E1U06DCK-N 产品概述

一、产品简介

TPD4E1U06DCK-N 是伯恩半导体(BORN)推出的一款单路、单向型瞬态电压抑制器(TVS),专为敏感接口和信号线提供快速过电压防护而设计。器件工作电压(反向截止)为 5V,击穿电压 6V,能够在瞬态事件发生时将过电压钳位在约 18V 水平,有效保护下游电路免受高幅脉冲干扰。

二、主要电气参数

  • 极性:单向(用于保护正向突发电压,负向导通至地)
  • 反向截止电压 Vrwm:5V
  • 击穿电压:6V
  • 钳位电压:18V(典型钳位水平,用于评估保护性能)
  • 峰值脉冲电流 Ipp:3A @ 8/20 µs(针对 IEC 61000-4-5 类浪涌测试)
  • 反向漏电流 Ir:50 nA(在 Vrwm 条件下,适用于低泄漏要求的系统)
  • 结电容 Cj:典型 0.25 pF,最大 0.5 pF(低电容设计,利于保持高速信号完整性)
  • 通道数:单路
  • 防护等级/认证:符合 IEC 61000-4-2 / IEC 61000-4-4 / IEC 61000-4-5 标准
  • 封装:SOT-363(超小型表面贴装,适合空间受限设计)

三、功能特点与优势

  • 单向保护适合 DC+ 信号线与电源接口场景;在正向瞬态时迅速钳位,将能量导入地线。
  • 低结电容(0.25–0.5 pF)对高速数据链路干扰低,适合保护高速接口而不明显影响信号波形或上升时间。
  • 小封装 SOT-363 芯片级尺寸,便于在多通道或紧凑 PCB 布局中集成。
  • 符合常见电磁兼容(EMC)测试标准,可应对静电放电、浪涌及电快速瞬变等多种脉冲干扰。

四、典型应用场景

  • 5V 及以下的接口保护(如单线数据通道、UART、GPIO 口等)
  • 移动终端、便携式设备与工业控制器中的敏感信号保护
  • 通讯端口及传感器信号链路,要求低电容且需维持信号完整性的场合

五、设计与布局建议

  • 将 TVS 器件尽可能靠近被保护引脚放置,走线短且粗,以降低串联感抗与寄生电感。
  • 器件的接地端应连接至低阻抗地平面,采用多指金属焊盘或短回流路径以提高能量散逸能力。
  • 对于更高能量吸收需求,可与串联电阻或阻容滤波器配合使用,但需评估对信号带宽的影响。
  • 留意器件工作在 Vrwm 5V 附近时的热耗散与连续应力,避免长期暴露在超过额定电压的工作条件下。

六、可靠性与选型建议

选择本型号时,请确认保护对象的工作电压与峰值电压裕量,确保 Vrwm(5V)与系统正常工作电平匹配;低漏电流特性适合对静态电流敏感的应用。SOT-363 封装适合自动化贴装与小面积 PCB。若需要多路保护或更高脉冲承受能力,可考虑并联或选用多通道/更大能量等级的 TVS 器件。

总结:TPD4E1U06DCK-N 以低电容、适配 5V 系统的单向保护、以及紧凑封装为核心优势,适用于需保持高速信号完整性且要求可靠瞬态抑制的各类电子产品接口保护。

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