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BORN BNPTVS36VS1UR
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN BNPTVS36VS1UR
- Type
- BORN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- BNPTVS36VS1UR
- Electronic Component
- 1
- Package
- SOD-123F
- Electronic Component
- Electronic Component
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.042g
- Electronic Component
- 1
- Electronic Component
- BM0259279388
- Operating Temperature
- 55℃~+150℃
- Voltage
- 58.1V
- Current(Ir)
- 1uA
- Voltage(VBR)
- 44.2V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BNPTVS36VS1UR 产品概述
一、产品简介
BNPTVS36VS1UR 是由 BORN（伯恩半导体）推出的一款单向 TVS（二极管型瞬态电压抑制器），采用 SOD-123F 小封装设计，专为移动电话与便携式设备的电源与数据线浪涌、静电放电（ESD）与瞬态过压保护而优化。器件采用玻璃钝化芯片与环氧树脂封装，兼顾钳位性能与封装可靠性，适合空间受限且需高浪涌能力的应用场景。
二、关键电气参数
- 极性：单向（适用于直流电源及方向性保护）
- 反向截止电压 Vrwm：36 V
- 击穿电压 VBR：44.2 V（通常值）
- 钳位电压（Ipp 下）：58.1 V
- 峰值脉冲电流 Ipp：6.9 A（10/1000 μs 波形条件）
- 峰值脉冲功率 Ppp：400 W（10/1000 μs）
- 反向漏电流 Ir：1 μA（在 Vrwm 条件下）
- 工作温度范围：-55 ℃ 至 +150 ℃
三、主要特性与优势
- 钳位能力优秀：在典型冲击电流下保持低钳位电压，有效保护后级电路免受过压冲击。
- 低泄漏电流：1 μA 的低反向电流有助于降低静态功耗，适合电池供电设备。
- 低电容：适配高速信号线与数据接口，减少对信号完整性的影响（适用于移动设备数据线保护）。
- 高浪涌能力：400 W 的 10/1000 μs 峰值功率与 6.9 A 峰值脉冲电流，可承受短时间的大能量冲击。
- 工艺与封装可靠：玻璃钝化芯片提高热稳定性与可靠性，SOD-123F 封装利于自动焊接与批量生产。
四、典型应用场景
- 智能手机与功能机电源输入、充电口保护
- 便携式媒体播放器与移动终端的数据线与接口保护
- 电池管理接口、车载低压辅助设备及便携式通信设备的瞬态过压防护
五、设计与布局建议
- 靠近被保护元件放置：为获得最佳保护效果，BNPTVS36VS1UR 应尽可能靠近受保护的电源或数据引脚焊接。
- 优化接地回路：减少回路感抗，确保浪涌电流通过最短路径流向地线，以降低钳位电压和抖动。
- 考虑热散布：尽管器件具备高浪涌能力，频繁或高能量冲击下应考虑散热和保护电路设计，以防热应力累积。
- 与滤波器配合：在对信号完整性要求高的应用中，可与共模电感或差分滤波配合，兼顾滤波与瞬态保护。
六、可靠性与存储
器件工作温度覆盖 -55 ℃~+150 ℃，适应工业级与消费级温度要求。存储与焊接过程中建议遵循常规无铅回流温度曲线及湿敏等级处理，避免长期潮湿环境导致封装失效。
七、采购与替换参考
产品型号：BNPTVS36VS1UR，封装 SOD-123F，品牌 BORN。用于替换时应匹配关键参数（Vrwm、VBR、钳位电压、Ipp 与电容等），以确保在实际系统中的等效保护性能。
以上为 BNPTVS36VS1UR 的概要介绍与工程应用要点，便于工程师在移动与便携设备中进行选型与布局决策。如需更详细的原理图示意、波形测试数据或封装尺寸图，请告知以便提供进一步资料。
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