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BORN RCLAMP0522P-N
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN RCLAMP0522P-N
- Type
- BORN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- RCLAMP0522P-N
- Electronic Component
- 1
- Package
- DFN1610-6L
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 0.2pF；0.45pF
- Electronic Component
- BM0264602973
- Voltage
- 15V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 500nA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
RCLAMP0522P-N SLP-1610 产品概述
一、产品简介
RCLAMP0522P-N 是 BORN（伯恩半导体）推出的一款四路单向瞬态电压抑制（TVS）二极管，封装为 DFN1610-6L（SLP-1610）。器件针对5V工作电压系统提供过压及静电放电保护，适用于需低结电容且多通道保护的高速接口与电源线应用。
二、主要参数
- 极性：单向
- 反向截止电压 Vrwm：5 V
- 击穿电压 VBR：8 V（典型）
- 钳位电压 Vc（峰值）：15 V（在标准8/20 μs 测试条件下）
- 峰值脉冲电流 Ipp：5 A @ 8/20 μs
- 峰值脉冲功率 Ppp：75 W @ 8/20 μs
- 反向漏电流 Ir：≤ 500 nA
- 通道数：4 路
- 结电容 Cj：0.2 pF；0.45 pF（视通道与测试条件而定）
- 防护等级：符合 IEC 61000-4-2（ESD）、IEC 61000-4-4（EFT）、IEC 61000-4-5（雷击浪涌）标准
三、关键特性
- 低钳位电压（典型 15 V），在瞬态事件中有效限制电压尖峰，保护下游器件。
- 低漏电流（≤500 nA），适合对静态功耗敏感的便携和电池供电系统。
- 超低结电容（0.2 pF / 0.45 pF），对高速信号线影响小，兼容高速数据接口的信号完整性要求。
- 四路集成设计，节省 PCB 空间，便于对多条信号线或差分对进行集中保护。
- 小型 DFN1610-6L 封装，适合空间受限的终端和模块化产品。
四、典型应用
- 5V 系统的电源浪涌与ESD防护（如充电口、外部电源入口）
- 高速数据接口保护（USB、差分信号对、串行总线等）——低结电容对信号影响小
- 手机、平板、笔记本外围接口保护
- 通信设备、工业控制与仪表的接口防护
五、封装与 PCB 布局建议
- 将器件放置在受保护端口与 PCB 入口附近，尽可能靠近连接器以缩短受保护信号线的走线。
- GND 引脚应通过多个过孔连接到底层大面地，以减小环路阻抗并提升能量散逸能力。
- 对于高能量脉冲（雷击类），推荐在器件附近预留散热路径并避免长而窄的地线。
- 对差分信号线保持匹配走线并在保护器件前后仍尽量控制线长，避免影响信号完整性。
六、选型与采购提示
- 若系统为 5 V 工作电压且需保护多路高速信号，RCLAMP0522P-N 是紧凑且低容的合适选择。
- 关注具体通道结电容值（0.2 pF 与 0.45 pF），针对信号速率关键通道优先使用低电容通道布局。
- 确认工作环境的瞬态能量水平是否在器件 75 W@8/20 μs 与 5 A 峰值电流能力内；如需更高耐受力，可并联或选用更大功率器件。
本器件以其小封装、四路集成和低电容特性，适合对空间与信号完整性要求较高的现代电子产品，能够在常见的 ESD、EFT 与浪涌事件中提供可靠保护。若需引脚图、详细电气特性曲线或参考设计，请参考厂商数据手册。
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