WMSIC Electronic Components

BELLING BL24C256AE0-PARC BL24C256AE0

ModelBL24C256AE0-PARC
PackageSOP-8L
BrandBELLING
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BELLING BL24C256AE0-PARC
Type
BELLING
Minimum package
2500 卷

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BELLING
Electronic Component
BL24C256AE0-PARC
Electronic Component
1
Package
SOP-8L
Electronic Component
EEPROM
Electronic Component
0.258g
Electronic Component
1
Electronic Component
BM0230871964
Electronic Component
256Kbit
Operating Temperature
40℃~+125℃
Operating Voltage
1.7V~5.5V
Interface Type
I2C
Electronic Component
100
Clock Frequency(fc)
1MHz
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BL24C256AE0-PARC 产品概述

一、概览

BL24C256AE0-PARC 是贝岭(BELLING)推出的一款高可靠性串行 I2C EEPROM,存储容量为 256Kbit(32K × 8),以 SOP-8L 封装提供,用于存储配置参数、序列号、校准数据、日志等非易失性信息。器件支持高达 1MHz 的串行时钟,工作电压范围宽(1.7V~5.5V),并在工业级温度范围内(-40℃~+125℃)稳定工作,适配各类嵌入式与消费电子场景。

二、主要特性

  • 接口类型:标准两线 I2C(上限时钟频率 fc = 1MHz,兼容 Fast-mode Plus)
  • 存储容量:256Kbit(等同 32KB)
  • 工作电压:1.7V ~ 5.5V,支持低压单节锂电池供电与 5V 系统兼容
  • 写周期时间(Tw):典型 3ms(单页写入完成所需时间)
  • 数据保留(TDR):100 年(符合 EEPROM 长期可靠性预期)
  • 写循环寿命:1,000,000 次(高耐久写入,适合长寿命设计)
  • 工作温度:-40℃ ~ +125℃(工业级)
  • 封装:SOP-8L,适合自动贴装工艺

三、性能参数要点(设计参考)

  • I2C 兼容:遵循标准 I2C 事务(起始/停止、ACK/NACK 机制),支持随机读、顺序读与页写操作。
  • 低压启动:1.7V 的低压工作能力便于直接与低功耗 MCU 或电池管理系统配合。
  • 写入/擦写机制:典型单次写周期约 3ms;为获得最快的写入效率,应尽量使用页写(将多个字节合并写入以减少总写周期次数)。
  • 可靠性:100 年数据保持与 1,000,000 次写循环,适合需要长期保存关键数据或频繁更新的应用场景。
  • 温度耐受:-40℃~+125℃,可用于工业控制、汽车电子等恶劣环境。

四、典型应用

  • 配置与校准参数存储(传感器校准值、设备设定)
  • 产品序列号与生产信息写入
  • 非易失日志与事件记录(关键事件、故障码)
  • IoT 节点的本地参数保存(网络凭证、运行状态)
  • 工业设备与仪表的固件配置回溯
  • 低功耗便携设备的数据保持与备份

五、工程应用建议

  • 电源与去耦:在 EEPROM VCC 与 GND 之间放置 0.1µF 陶瓷去耦电容,靠近器件供电引脚布置,以抑制瞬态噪声并提高总线稳定性。
  • I2C 上拉电阻:上拉电阻值依据总线速度与总线负载选择;常见参考值为 4.7kΩ(100kHz)、2.2kΩ(400kHz)、1kΩ(1MHz),实际选择需考虑 PCB 布线电容与多器件总线情况。
  • 写操作优化:利用页写特性将连续地址写入合并在一次写周期内,以降低总写入时间与延长寿命。写入后建议使用 ACK 轮询(或等待典型 Tw)判断器件写就绪状态,避免在写入完成前发起新事务。
  • 电源监测与写保护:应用中如需防止断电时写入半完成,建议在系统中加入电源监测(Brown‑out 检测)或在需要时使用外部写保护(若封装引出 WP 引脚,具体功能以数据手册为准)。在关键写入前可以短时间禁用写入以保证数据一致性。
  • 抗干扰布线:SCL/SDA 线尽量短且远离高速信号,若总线需跨板或较长距离,考虑加速率降低、屏蔽或串联小阻抗以缓解反射与干扰。
  • 可靠性设计:尽管器件具备高写入寿命,频繁写入同一地址会集中磨损;对高频率写入的数据,建议在上层使用写均衡或循环日志结构以延长总体系统寿命。

六、封装与采购注意事项

  • SOP-8L 封装适合自动化贴片生产,焊接工艺需控制回流曲线以保证焊点可靠。
  • 具体引脚定义(如 A0–A2、WP、地址方式)和电气特性应以贝岭官方数据手册为准;在设计前务必获取并校核完整数据手册及推荐应用电路。
  • 量产采购时确认封装后缀(PARC)与储运条件,关注批次与存货状况以避免长期 BOM 不一致问题。

总结:BL24C256AE0-PARC 提供了在低压与工业温度范围内的高可靠性、长数据保持时间与高写入寿命,适合需要稳定、长期保存配置与日志数据的嵌入式和工业应用。设计时关注电源完整性、I2C 总线布线与写入策略,可充分发挥器件性能。

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