WMSIC Electronic Components

Bencent BF801M

ModelBF801M
PackageSMD
BrandBencent
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Bencent BF801M
Type
BENCENT
Minimum package
1000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BENCENT
Electronic Component
BF801M
Electronic Component
1
Package
SMD
Electronic Component
(GDT)
Electronic Component
±20%
Electronic Component
0.83g
Electronic Component
1
Electronic Component
BM0265419022
Operating Temperature
40℃~+90℃
Capacitor
1pF
Electronic Component
Electronic Component
Electronic Component
1000
Current
3kA
Voltage(Vdc)
960V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BF801M 贴片式气体放电管(GDT)产品概述

一、产品核心定位与典型应用场景

BF801M是Bencent(槟城)推出的小型化贴片式气体放电管,核心作用是为电路提供中高压过压防护,针对雷击浪涌、电源瞬态过压等强干扰场景设计。其典型应用覆盖三大领域:

  1. 通信设备:4G/5G基站射频模块、光纤收发器、路由器的信号/电源端口防护——低极间电容(1pF)不影响高频信号传输,避免射频信号衰减;
  2. 工业控制:PLC、变频器、传感器节点的电源输入防护——宽温范围(-40℃~+90℃)适应车间/户外复杂环境,无需额外降额设计;
  3. 消费电子与家电:高端显示器、机顶盒、智能家居网关的电源端口——应对市电波动(如电压突升)或感应雷击干扰,提升设备稳定性。

不同于压敏电阻的“电压钳位”,GDT通过内部惰性气体电离实现“过压导通泄放”,通流能力更强,适合大能量浪涌防护。

二、关键电气参数深度解析

BF801M的参数设计针对性强,需结合应用场景理解:

  • 直流击穿电压(Vdc:960V±20%):实际触发电压范围为768V~1152V,确保正常工作电压(如市电220V、通信电源48V)远低于此,避免误触发;同时保证过压时及时导通,无“延迟失效”。
  • 脉冲放电电流(3kA,8/20μs波形):峰值3000A的瞬时浪涌承受能力,可应对直接雷击(一般雷击浪涌峰值多在1kA~5kA)或电源开关瞬态大电流,是同类小型GDT中的高规格。
  • 极间电容(1pF):极低电容值对高频信号(如射频、高速数字信号)影响极小,避免信号失真,这是其适配射频通信的核心优势(若电容≥10pF,会明显过滤高频信号)。
  • 冲击击穿电压(Vimp:1.6kV):脉冲状态下的击穿电压高于直流值,意味着瞬时浪涌时触发速度更快(约100ns~1μs),减少浪涌能量对后端电路的冲击。
  • 工作温度范围:覆盖工业级宽温,可稳定工作于极端低温(-40℃)或高温(90℃)环境,适配户外基站、车间设备等场景。

三、封装与可靠性设计优势

BF801M采用4.2×5mm小型SMD封装,具备三大设计优势:

  1. 空间效率:贴片式封装适配自动化贴装,无需额外引线,节省PCB布局空间(比插件式GDT节省约60%面积),适合高密度电路设计(如基站射频板);
  2. 气密性保障:气体放电管的核心性能依赖内部惰性气体(如氖气)的稳定性,Bencent采用激光焊接封装,气密性达到工业级标准(泄漏率≤1×10^-9 Pa·m³/s),长期使用无气体泄漏风险;
  3. 焊接可靠性:封装材料可承受回流焊温度(峰值260℃左右),焊接后无虚焊、脱落问题,适配常规SMT生产流程(如无铅回流焊)。

此外,该器件为双向防护设计(无极性),安装时无需区分正负极,简化生产流程。

四、选型与使用注意事项

BF801M虽性能优异,但需注意以下使用要点:

  1. 配合多级防护:GDT响应速度慢于TVS(ns级),建议前端用BF801M扛大电流浪涌,后端并联TVS,实现“快速响应+大能量泄放”的组合防护(避免单一器件失效);
  2. 电压降额设计:正常工作电压应低于直流击穿电压下限的80%(即614V以下),避免长期接近击穿电压导致器件老化(老化会使击穿电压下降,增加误触发风险);
  3. 安装位置优化:尽量靠近被保护电路的输入端口(如电源进线、信号接口),减少引线长度(≤5cm)——引线电感会降低浪涌泄放效率,影响防护效果;
  4. 焊接温度控制:回流焊温度曲线需符合JEDEC标准,避免超过260℃/10秒,防止封装变形或内部气体泄漏。

五、总结

BF801M是一款兼顾“高防护能力、小型化、高频适配”的贴片GDT,尤其适合中高压电路的浪涌防护场景。其3kA脉冲通流能力、1pF低电容、宽温设计,使其在通信基站、工业控制、高端消费电子等领域具有明显优势,是替代传统插件GDT的理想选择。

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