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CBI(创基) 1N5817W
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CBI 1N5817W
- Type
- CBI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CBI
- Electronic Component
- 1N5817W
- Electronic Component
- 1
- Package
- SOD123
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0221031541
- Current
- 1A
- Diode
- Electronic Component
- Current(Ir)
- 1mA@20V
- (Vf)
- 750mV@3A
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1N5817W 肖特基二极管产品概述
一、产品简介
1N5817W是肖特基二极管系列中的一款高性能电子元件，广泛应用于各种电子电路中。该二极管具有低正向导通电压、快速的开关速度以及优良的温度特性，这使其特别适合用于高频开关电源、整流电路及反向保护等多种应用场景。
二、主要参数
- 正向电压降（Vf）: 750mV@3A
- 反向耐压（Vr）: 20V
- 最大正向电流（If）: 1A
- 封装类型: SOD-123
- 品牌: CBI（创基）
这些参数使1N5817W适用于各种要求低电压和中等功率的应用，在高效能与小功率需求之间取得了良好的平衡。
三、封装特性
1N5817W采用SOD-123封装，具有小体积和良好的热特性。SOD-123封装的设计使其在有限的空间内提供可靠的性能，能够有效减少电路板的占用面积。这种封装常见于便携式设备和空间有限的应用中。此外，小封装体积也有助于提升电子产品的轻量化。
四、工作原理
肖特基二极管的工作原理依赖于其金属-半导体接触，它的导通特性使得其正向电压降显著低于普通的硅二极管。这一特性使得在相同的电流下，肖特基二极管能够减少功率损耗，提高整体电路的效率。与硅二极管相比，肖特基二极管具有更快的恢复时间，这对于高频应用尤为重要。
五、应用场景
1N5817W广泛用于以下场景：
开关电源: 在开关电源中，1N5817W可用作整流二极管，帮助完成高效的能量转换。
电池充电器: 在电池充电器电路中用于反向保护，有效保护充电电路及电池。
直流到直流变换器（Buck / Boost Converter）: 用于提高电路转换过程中的效率，尤其是在高频开关操作时。
LED驱动电路: 提供低压降，增强LED的亮度和效率。
网络通信设备: 在FET驱动和保护电路中，有效避免反向电流损坏其他元件。
六、优势与特点
低正向电压降: 750mV@3A的低正向电压使得在高电流条件下仍能保持较低的功耗。
高效率: 快速的开关特性使其在高频应用中减少了开关损耗，提高了整体系统的效率。
优良的热性能: 1N5817W能够承受一定的热环境，使其在多种工作条件下仍能稳定运行。
反向电流小: 较低的反向漏电流使其更适合在低功耗和高稳定性的电路中使用。
七、结论
综上所述，1N5817W是一款具有出色性能的肖特基二极管，凭借其低正向电压、快速作用和良好的散热特性，成为许多现代电子应用中的理想选择。从开关电源到充电器再到LED驱动电路，其性能和效率都能满足各种严苛的需求。选择CBI（创基）的1N5817W，可以为电子产品的质量与性能提供极大的保障。
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