WMSIC Electronic Components

CRMICRO CRSS037N10N

ModelCRSS037N10N
PackageTO-263
BrandCRMICRO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CRMICRO CRSS037N10N
Type
CRMICRO
Minimum package
1000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CRMICRO
Electronic Component
CRSS037N10N
Electronic Component
1
Package
TO-263
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
1.883g
Electronic Component
1
Electronic Component
BM0006155213
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
227W
Gate Voltage(Vgs)
±20V
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

CRSS037N10N 产品概述

一、基本信息

CRSS037N10N是一款高性能的N沟道场效应管(MOSFET),具有227W的额定功率,100V的最大漏源电压和120A的最大漏电流。这款产品采用TO-263封装,适用于各类高效率开关电源、DC-DC转换器、电机控制及其他需要高电流和高电压的应用场景。由品牌CRMICRO(华润微)生产,CRSS037N10N以其卓越的性能和可靠性满足了现代电子产品对高标准元件的要求。

二、技术参数

  • 类型:N沟道MOSFET
  • 封装形式:TO-263
  • 最大持续漏源电流(ID):120A
  • 最大漏源电压(VDS):100V
  • 最大功率(PD):227W
  • 栅极到源极电压(VGS):±20V
  • RDS(on):在特定条件下的导通电阻,通常能在1.5mΩ到3mΩ范围内,具体值依据不同的工作条件而定。
  • 开关时间(tr, tf):快速开关响应时间,适合高频应用。

三、应用领域

CRSS037N10N因其优秀的电气特性和结构设计,广泛应用于以下几个领域:

  1. 开关电源:作为开关元件,能够显著提高转换效率,并降低功耗。
  2. DC-DC转换器:在电源管理系统中,作为高电流/高效率的开关器件,提升输出稳定性。
  3. 电机驱动:在电机控制系统中,可以有效控制电机起停、转速等,适用于各种电动机驱动场景。
  4. LED驱动:适合用于驱动LED照明产品以实现高效能的照明解决方案。
  5. 续航设备:由于其高效能特点,适于在电池驱动的设备中使用,有助于延长电池使用时间。

四、优越性

CRSS037N10N的设计考虑了电源转换中的模式变化,其关键优势包括:

  • 高效率:由于低RDS(on)实现了低导通损耗,使得MOSFET在高负载情况下依然能够维持较低的热损耗。
  • 良好的热管理:TO-263封装能够帮助元件更好地散热,在高功率应用中表现出色,降低元件损耗,提高系统整体的可靠性。
  • 宽广的工作范围:其能够承受的高电压和电流让它在多种严苛的工作条件下依然可靠运行。
  • 低栅电荷:低栅电荷特性使得其开关速度快,极大地提高了产品在高频应用中的稳定性和效率。

五、典型特性曲线

在设计任何利用CRSS037N10N的电路时,厂家提供的典型特性曲线可以作为重要的参考资料,包括:

  • V-I特性:展示了漏电流与漏源电压之间的关系,帮助设计师优化电路设计。
  • 导通电阻(RDS(on))与温度的关系曲线:在不同的工作环境下保持电流稳压。

六、总结

CRSS037N10N作为一款高性能N沟道MOSFET,凭借其卓越的电流承载能力、低导通阻抗以及广泛的应用场景,成为各类电子设备中的理想选择。无论是在开关电源还是电机控制中,其性能都能满足苛刻的市场需求。随着电子产品对小型化、高效能的持续追求,CRSS037N10N将对推动相关技术进步发挥重要作用。

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