Model & package intelligence
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DIODES BC856B-7-F BC856B
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- DIODES BC856B-7-F
- Type
- DIODES
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- BC856B-7-F
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0000280308
- Operating Temperature
- 65℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 200MHz
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：BC856B-7-F晶体管
一、产品简介
BC856B-7-F是一款高性能的PNP型双极性晶体管（BJT），其设计强调了优异的电流增益以及较低的饱和压降，使其在多个电子应用中具有出色的性能表现。此款元器件主要由DIODES（美台）公司生产，采用SOT-23封装，适合显著节省空间的表面贴装设计。凭借其卓越的工作参数与稳定性，BC856B-7-F广泛应用于小信号放大器、开关电路以及其他线性和非线性电路中。
二、主要参数
额定功率与电流
- 额定功率：300mW
- 集电极电流 (Ic)：最大100mA，适用于低功耗应用环境。
- 电流 - 集电极截止（最大值）：15nA，确保在关断状态下的超低漏电流，适合对功耗敏感的电路。
电压参数
- 集射极击穿电压 (Vce)：最大值65V，适应较高电压的应用场景。
- 饱和压降 (Vce sat)：650mV @ Ic=5mA和100mA，提供优秀的开关特性。
电流增益
- DC电流增益 (hFE)：最小值220 @ 2mA, 5V，表明在较低输入电流下仍能实现良好的放大效果，为信号增益提供稳定支持。
频率与温度
- 频率 - 跃迁：200MHz，适用于高频信号的传输和处理。
- 工作温度范围：-65°C ~ 150°C（TJ），使得该器件能够在极端环境下稳定工作。
封装与安装
- 封装类型：SOT-23，体积小巧，便于进行批量生产与大规模集成。
- 安装类型：表面贴装（SMD），符合现代电子产品的设计需求，简化了PCB布局。
三、应用场景
BC856B-7-F适宜运用在多种电子电路中，包括但不限于：
- 音频放大器：可以用作音频信号的小信号放大。
- 开关电路：在开关电源和数字电路中用作信号开关。
- 传感器信号处理：可用于传感器信号的放大，提供准确的数据解析。
- RF放大器：适合用于射频应用中，包括无线通信设备。
四、总结
BC856B-7-F以其高额定功率、适中的集电极电流和宽广的工作温度范围，为各种电子设计需求提供灵活的解决方案。其高电流增益和低饱和压降特性，使其在高频和低功耗应用中表现出色。该晶体管的可靠性能与便捷的SOT-23表面贴装封装设计，使其在现代电子产品中十分受欢迎。无论是对于专业设计师，还是DIY爱好者，BC856B-7-F都是实现高效电路设计的理想选择。
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