WMSIC Electronic Components

DIODES MMBF170-7-F MMBF170

ModelMMBF170-7-F
PackageSOT-23
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
DIODES MMBF170-7-F
Type
DIODES
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
MMBF170-7-F
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.028g
Electronic Component
1
Electronic Component
BM0000282139
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBF170-7-F 产品概述

概述

MMBF170-7-F是一款高性能的N沟道金属氧化物半导体场效应管(MOSFET),专门设计用于各种低功耗电子电路中的开关和放大应用。该器件具有较低的导通电阻和高的电流处理能力,适用于多个领域,从消费电子到工业应用。

关键参数

  • 漏源电压 (Vds): 该器件可以承受高达60V的漏源电压,确保在不同电压环境下的可靠性和稳定性。
  • 连续漏极电流 (Id): 在25°C条件下,MMBF170-7-F的持续漏极电流为500mA,适用于驱动各类负载,如LED、继电器等。
  • 栅源极阈值电压 (Vgs(th)): 在250µA的条件下,阈值电压为3V,适合于逻辑电平驱动,提供灵敏的开关响应。
  • 导通电阻 (Rds(on)): 在导通状态下,导通电阻最大为5Ω(对于200mA,10V的测试条件),表现出优良的导电能力,有助于提升整体电路效率。
  • 功率耗散: 最大功率耗散为300mW,适于应用于低功耗电路,减少对散热设计的要求。
  • 工作温度范围: 该MOSFET能够在-55°C至150°C的宽广温度范围内工作,适合各种极端环境条件。

封装和安装

MMBF170-7-F采用SOT-23封装,适合表面贴装技术(SMT),其小巧的尺寸使得其可广泛应用在空间受限的电路板设计中。封装的STQ-236-3, SC-59等形式也保证了在不同安装工艺中皆可高效应用。

应用领域

MMBF170-7-F广泛应用于:

  1. 消费电子: 适用于智能手机、平板电脑等便携式设备中的电源管理与开关电路。
  2. 工业控制: 用于各种控制面板和自动化设备的开关电路。
  3. 汽车电子: 可用于汽车中各种电力控制和信号切换。

由于其出色的电气特性与广泛的工作温度范围,该MOSFET非常适合在要求严苛的应用中使用。

竞争优势

  • 高性能: 相较于同类产品,MMBF170-7-F提供了更好的电流承载能力和较低的导通电阻,增强了器件在高频率操作条件下的表现。
  • 可靠性: 经过严格测试,确保其在高温和低温条件下仍可稳定工作,适合各种苛刻的工作环境。
  • 灵活性: 支持广泛的驱动电压,使其在多种电路设计中均能发挥效能。

结论

MMBF170-7-F是一款卓越的N沟道MOSFET,适合低功耗、高可靠性的多种应用。其优越的电气性能与良好的热管理能力使其成为设计师和工程师在选择电子元器件时的理想选择。无论是在快速发展的消费电子领域,还是在需要高可靠性的工业控制和汽车电子应用中,MMBF170-7-F都能够发挥其最大的性能潜力。

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