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DIODES DMN3032LE-13 DMN3032LE
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- DIODES DMN3032LE-13
- Type
- DIODES
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- DMN3032LE-13
- Electronic Component
- 1
- Package
- SOT-223
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.232g
- Electronic Component
- 1
- Electronic Component
- BM0000280858
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 14W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：DMN3032LE-13 N沟道MOSFET
概述： DMN3032LE-13是一款高性能的N沟道金属氧化物半导体场效应管（MOSFET），设计用于高效的开关和线性应用。该器件具有优良的电气特性和出色的热管理能力，适用于广泛的电子设备和电源管理系统。其表面贴装形式的封装（SOT-223）能够极大地方便PCB板的设计与实现。
基本参数：
- 漏源电压（Vdss）： 30V
- 连续漏极电流（Id）（25°C时）： 5.6A
- 栅源极阈值电压（Vgs(th)）： 2V @ 250µA
- 漏源导通电阻（Rds(on)）： 29mΩ @ 3.2A，10V
- 最大功率耗散（Ta=25°C）： 1.8W
- 工作温度范围： -55°C ~ 150°C
- 栅极电荷（Qg）： 11.3nC @ 10V
- 输入电容（Ciss）： 498pF @ 15V
- 封装： SOT-223
电气特性： DMN3032LE-13的漏源电压为30V，允许该器件在中等电压应用中稳定运行。其5.6A的连续漏极电流能力在各种电源转换和开关应用中表现出色，能够满足许多高电流需求的系统设计。该器件的导通电阻非常低（29mΩ），意味着在传导期间能耗极小，有助于提高整体系统效率并降低热量产生，从而延长设备的工作寿命。
阈值电压及栅极驱动： DMN3032LE-13的栅源极阈值电压仅为2V，适合低压驱动应用，能够在较低的栅电压下开启。这为微控制器和低电压设备的兼容性提供了便利。器件的最小栅压驱动电压为4.5V，可以达到最大Rds(ON)性能，进一步确保了在0~10V的栅源电压下的性能稳定性。
热管理与功率耗散能力： 该MOSFET具有1.8W的最大功率耗散能力，能够在适中的温度条件下有效管理热量。这一特性在高负载应用中尤为重要，有助于保持器件的稳定性并延长其使用寿命。MOSFET的工作温度范围为-55°C到150°C，能够在各种环境条件下保持可靠性能，适合航空航天、汽车及工业应用中的极端条件。
应用领域： DMN3032LE-13广泛应用于电源管理、高频开关、直流-直流转换器、马达驱动和其他需要高效率开关的场合。其低导通电阻和高电流处理能力使其极为适合于智能手机、电动工具、LED驱动器等现代电子产品中的电源供应和信号传输。此外，其极好的抗干扰性和工作温度范围也使得其在严苛的工业环境中表现出色。
总结： DMN3032LE-13是一款性能卓越的N沟道MOSFET，结合了高电流承载能力和低功耗特性，适合各种高效能电子应用。其在多个行业中的适用性，使其成为电源设计及开关控制中的理想选择。使用DMN3032LE-13，将为电子设计和制造带来更多的灵活性与创新性。选择此器件，能够有效提升系统性能，降低能耗，增强产品竞争力。
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