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DIODES RS1D-13-F RS1D
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- DIODES RS1D-13-F
- Type
- DIODES
- Unit
- Electronic Component
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- RS1D-13-F
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.122g
- Electronic Component
- 1
- Electronic Component
- BM0258618890
- Current
- 1A
- Current(Ir)
- 5uA@200V
- (Vf)
- 1.3V@1A
- Electronic Component
- 65℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
RS1D-13-F 产品概述
基本信息： RS1D-13-F 是由国际知名品牌 DIODES(美台) 生产的一款快速恢复、高效率的标准二极管，其额定参数极为适合多种电子应用场合。该器件采用 SMA 封装，具有出色的热性能和高可靠性，适用于各种电气设备和电路设计。
关键规格：
- 反向恢复时间（trr）：150ns
- 直流反向耐压（Vr）：200V
- 平均整流电流（Io）：1A
- 正向压降（Vf）：1.3V @ 1A
- 反向泄漏电流：5µA @ 200V
- 容抗：15pF @ 4V，1MHz
- 工作温度范围：-65°C ~ 150°C
产品特性：
高效能与快速恢复特性
RS1D-13-F 的反向恢复时间仅为 150ns，表明其具有快速响应的能力，这使得它在高频应用中表现出色。相较于传统的整流二极管，该器件在转换频率较高的情况下降低了开关损耗，从而提高了整体电路的效率。耐压能力与可靠性
该二极管的直流反向耐压（Vr）可达到 200V，能够适应高电压的工作环境，且反向泄漏电流低至 5µA，这为电路的稳定性和可靠性提供了保障。正向压降特性
在 1A 的工作电流下，正向压降为 1.3V，这意味着在高负载工作条件下，能量损耗相对较低，能够有效提高电路的功率效率。广泛的应用场景
RS1D-13-F 的额定参数和优异性能使其适用于各种应用，包括但不限于开关电源、整流电路、反向保护电路及高频整流器等。由于其高速特性，它也非常适合用于高频通讯设备和频率转换器等领域。热性能与封装设计
该二极管采用了 SMA 封装，适合表面贴装技术，具有优良的热管理能力，能有效地散热，保证了装置在 -65°C ~ 150°C 的广泛工作温度范围内稳定运行。
总结： RS1D-13-F 是一款极具性价比的快速恢复二极管，结合了高耐压、低正向压降和优良的反向恢复性能，广泛适用于多种中高频应用场合。它的设计理念是将高效能与高可靠性结合，为电子产品的优化和性能提升提供了强有力的保证。无论是在电源模块、LED 驱动还是其他需要快速开关并要求低能耗的应用中，RS1D-13-F 都是理想的选择。对于寻求高效、可靠电子解决方案的设计师而言，这款二极管无疑是值得考虑的优秀产品。
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