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DIODES DMN2990UFA-7B DMN2990UFA
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- DIODES DMN2990UFA-7B
- Type
- DIODES
- Unit
- Electronic Component
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- DMN2990UFA-7B
- Electronic Component
- 1
- Package
- XFDFN-3(0.6x0.8)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0084327864
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 400mW
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：DMN2990UFA-7B N通道MOSFET
概述
DMN2990UFA-7B是一款高性能的N通道MOSFET，适用于各种电子电路应用。由著名的电子元器件制造商DIODES（美台）生产，该产品在小型化设计和高效率操作方面具有显著优势。其卓越的电流处理能力和低导通电阻使其成为开关电源、负载驱动、电机控制等领域的理想选择。
基本参数
- FET类型: N通道
- 技术: MOSFET（金属氧化物半导体场效应管）
- 漏源电压（Vdss）: 最多可承受20V的漏源电压，适合高频应用。
- 连续漏极电流（Id）: 在25°C环境下，连续漏极电流达到510mA，显示出其优秀的电流驱动能力。
- 驱动电压: 本器件在1.2V和4.5V下展示了不同的导通电阻，确保在不同工作条件下系统的稳定性。
导通电阻和阈值电压
DMN2990UFA-7B在不同的Id与Vgs条件下展现了低导通电阻，主要参数为990毫欧，在100mA和4.5V电压下。此性能减小了功耗，有助于提升系统整体效率。在不同的Vgs条件下，其阈值电压Vgs(th)最大值为1V@250μA，确保MOSFET能够在较低的栅极电压下可靠导通。
输入电容与栅极电荷
该MOSFET对高速开关应用极为友好，其输入电容（Ciss）在不同的Vds下最大为27.6pF@16V。这一性能对于减少开关时间、降低驱动电流消耗至关重要。此外，栅极电荷（Qg）最大值为0.5nC，在4.5V驱动下，能有效减少栅极驱动功耗，从而提高电路的工作效率。
热特性与功率耗散
DMN2990UFA-7B的最大功率耗散为400mW（Ta），广泛支持在-55°C到150°C的工作温度范围，确保在恶劣环境条件下稳定运行。
封装与安装
该器件采用表面贴装型封装（3-XFDFN，尺寸为0.6mm x 0.8mm），具有更小的占板面积和更好的热散热性能，适合用于空间受限或要求高密度组装的电子设备。这种封装不仅利于自动化生产，也有助于提高电路的可靠性。
应用场景
DMN2990UFA-7B广泛应用于以下几个领域：
- 便携式产品: 由于其低功耗和小巧的封装，适合用于手机、平板电脑等便携式电子产品的电源管理。
- 电源模块: 在DC-DC转换器和其他电源管理电路中，该MOSFET可用于开关应用，提供高效率。
- 电机驱动: 适合用于小型电机控制，包括电动玩具、小型家电等。
结论
DMN2990UFA-7B是一款性能卓越且高度集成的小型N通道MOSFET，适合各类现代电子设备的需求。其低导通电阻、宽工作温度范围以及稳定的电气特性，使其成为工程师理想的选择。通过选用该器件，开发者能够更加有效地提升产品性能，缩小体积，降低功耗，满足市场对高效能电子产品的需求。
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