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DIODES SDM02U30LP3-7B SDM02U30LP3
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- DIODES SDM02U30LP3-7B
- Type
- DIODES
- Unit
- Electronic Component
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- SDM02U30LP3-7B
- Electronic Component
- 1
- Package
- X3-DFN0603-2
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.01g
- Electronic Component
- 1
- Electronic Component
- BM0257677855
- Current
- 100mA
- Diode
- 1
- Current(Ir)
- 4uA@30V
- (Vf)
- 370mV@10mA
- Electronic Component
- 65℃~+150℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：SDM02U30LP3-7B肖特基二极管
1. 产品背景
SDM02U30LP3-7B 是一款高性能的肖特基二极管，由全球知名的电子元器件供应商DIODES（美台）制造。该元件设计用于满足高效能整流的需求，广泛应用于电源管理、数据传输、开关电源和其他特殊电路中。
2. 主要特性
直流反向耐压（Vr）: 最大30V，这一特性使它适合在需要中等电压操作的电路中使用，能够有效抵抗反向电压带来的击穿风险。
平均整流电流（Io）: 100mA，使其能在多种应用中有效地传输电流，可以满足大多数小信号处理的需求。
正向压降（Vf）: 在10mA电流下，其正向压降为370mV。这一低压降特性减少了功率损耗，提高了电路的能效，尤其在需要长时间工作的设备中表现尤为突出。
反向泄漏电流: 在30V的反向电压下，反向漏电流仅为4µA，这表明其具有优秀的反向阻断能力，能够有效地降低在实际应用中因反向漏电而导致的能量损耗。
速度特性: 能够处理小信号且支持任意速度的操作，这使得SDM02U30LP3-7B可应用于高频率应用场景，如开关电源和射频电路。
3. 物理特性
封装类型: 采用0201（0603公制）表面贴装型封装，最小化了电路板的空间占用，适合对空间要求严格的小型设备。
封装/外壳: 具体的封装为X3-DFN0603，确保元件在复杂电路中的稳固连接和良好的热性能。
工作温度范围: 该二极管能够在-65°C至150°C的温度范围内工作，满足各种环境条件下的使用需求，尤其适合用于航空航天及工业操作环境。
4. 应用领域
SDM02U30LP3-7B的独特特性使其适用于多个领域的应用，包括但不限于：
- 开关电源: 在电源转换过程中提升效率，降低功耗。
- 整流电路: 作为整流器件在各种电流应用中提高整流效率。
- 电池管理: 由于其低正向压降和小反向泄漏特性，适合用于可再生能源和便携式电子设备中的电池管理。
- 移动设备: 由于其小型表面贴装封装，非常适合现代手机、平板电脑等小型电子产品。
5. 结论
总的来说，SDM02U30LP3-7B 是一款高效且技术先进的肖特基二极管，其在电压、功率损耗和空间占用方面的优越性能，使其成为许多现代电子应用的理想选择。无论是在开关电源、数据整流还是电池管理方面，该产品都展现出出色的能力，能够满足行业对高效、可靠元件的需求。选择SDM02U30LP3-7B，您将获得一款能够为您的电路和设备提供优秀性能的电子元器件。
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