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DIODES DMP1100UCB4-7 DMP1100UCB4
Configuration
1 options
Configuration
17+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- DIODES DMP1100UCB4-7
- Type
- DIODES
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- DMP1100UCB4-7
- Electronic Component
- 1
- Package
- X2-WLB0808-4
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.02g
- Electronic Component
- 1
- Electronic Component
- BM0000280866
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.1W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 12V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：DMP1100UCB4-7 P沟道MOSFET
概述
DMP1100UCB4-7是一款高性能的P沟道金属氧化物半导体场效应管（MOSFET），其设计专为多种应用场合提供可靠的性能和高效能，包括电源管理、负载开关和信号调节等。这款器件由著名制造商DIODES（美台）提供，兼具优异的电气特性和广泛的温度适应性，使其适合各类电子设备。
主要规格
- 漏源电压 (Vdss): 12V
- 连续漏极电流 (Id): 2.5A（在25°C时）
- 栅源极阈值电压 (Vgs(th)): 800mV @ 250µA
- 漏源导通电阻 (Rds(on)): 83mΩ @ 3A, 4.5V
- 最大功率耗散 (Pd): 670mW（在环境温度为25°C时）
- 工作温度范围: -55°C 至 150°C
电气特性
DMP1100UCB4-7的设计使其在工作时能有效控制电流并最小化功耗。其漏源导通电阻在4.5V驱动电压下为83毫欧，表现出色，适合高频率和高功率应用。栅源极阈值电压为800mV，确保了在低电压驱动下呈现出良好的开关性能。
驱动电压与导通电阻
在不同的工作环境下，DMP1100UCB4-7展现出灵活性。其最大导通电阻在驱动电压为1.3V及4.5V时的表现，致使这款器件能够优化控制电流与开关速度，对于电源开关、信号调节等要求高效能的应用来说，DMP1100UCB4-7为设计师提供了极大的便利。
封装与安装
DMP1100UCB4-7采用X2-WLB0808-4封装，表面贴装型设计，使其容易集成于小型化电路中。这一封装形式不仅提高了生产效率，还在空间有限的PCB（印刷电路板）布局中提供了更大的灵活性。
应用领域
DMP1100UCB4-7广泛适用于各种电子设备，包括但不限于：
- 电源管理系统
- 电池供电装置
- DC-DC转换器
- 负载开关
- 电子开关装置
- 信号处理和调节电路
其高度的适用性和可靠性使DMP1100UCB4-7成为多种应用的理想选择。
结论
总的来说，DMP1100UCB4-7是一款卓越的P沟道MOSFET，其优越的电气特性和广泛的应用适应性使其成为电子产品设计中不可或缺的组件。在选择合适的MOSFET时，DMP1100UCB4-7以其良好的性能和稳定性，为设计师提供了有效的解决方案。无论是在高达150°C的工作环境中，还是在高频开关应用中，DMP1100UCB4-7都能确保设备的高效运作，满足当今市场对电子元器件日益提升的要求。
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