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DIODES DMN60H080DS-13 DMN60H080DS
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIODES DMN60H080DS-13
- Type
- DIODES
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- DMN60H080DS-13
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.02g
- Electronic Component
- 1
- Electronic Component
- BM0084328071
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 700mW
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
- Voltage(Vdss)
- 600V
- Capacitor(Ciss)
- 25pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DMN60H080DS-13 产品概述
概述
DMN60H080DS-13 是由美台（DIODES）生产的一款高性能N沟道金属氧化物半导体场效应管（MOSFET）。该器件以其卓越的电气特性和广泛的应用场景，成为许多电源管理和控制系统中不可或缺的电子元器件。它的最大漏源电压为600V，适合高电压应用；可提供高达80mA的连续漏极电流，确保其在各种工作条件下的可靠性。
特性
高电压能力：DMN60H080DS-13的漏源电压（Vds）最高可达600V，能够满足各种高压电路的需求，适用于电源转换、开关电源及稳定器等领域。
低导通电阻：在10V的栅源电压（Vgs）下，导通电阻（Rds(on)）可低至100Ω（在60mA的漏电流状态下）。这种低Rds(on) 信号可有效降低功耗与热损失，提供更高的效率。
栅极驱动电压：该器件设计支持从4.5V至10V的范围内运行，提供灵活的驱动电压选项，使其能更好地与不同逻辑电平的控制信号相匹配。
高工作温度范围：该器件的工作温度范围为-55°C到150°C，适应恶劣工作环境和温度波动，确保在极端条件下的稳定性与可靠性。
低输入电容：该MOSFET在25V时的输入电容（Ciss）最大值为25pF，这使其在开关频率较高的应用中表现优异，能够快速响应以支持高效的开关操作。
节省空间的封装设计：采用SOT-23-3封装，不仅体积小、重量轻，有利于降低整体系统的尺寸，还方便了现代电子电路中对表面贴装（SMD）技术的广泛应用。
应用领域
DMN60H080DS-13广泛应用于多个电力电子设备和控制系统中，具体应用场景包括但不限于：
- 开关电源：在提升和降压转换器中，提供高效的开关控制，减少导通损耗，提高能效。
- 马达驱动：在电动机控制和驱动电路中，能够有效地控制电机的开关操作，适应频繁的启停以及调速需求。
- 电源管理系统：在电池管理系统、太阳能逆变器等场合，确保电源安全高效地进行开关操作。
- 自动化控制系统：支持高频信号的快速开关，满足高速数据采集和控制系统的需求。
结论
DMN60H080DS-13是一款性能卓越、应用广泛的N沟道MOSFET，尤其在高电压、大功率的电源管理和控制系统中展现良好的性能表现。其高电压能力、低导通电阻和宽广的工作温度范围，使其在多种应用场景下都能提供可靠的解决方案。选择DMN60H080DS-13，无疑是追求高效、稳定和安全电源应用工程师的理想选择。
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