WMSIC Electronic Components

DIODES DMN3051L-7 DMN3051L

DIODES DMN3051L-7 DMN3051L
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Product image

ModelDMN3051L-7
PackageSOT-23
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

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Technical data

Product details

20 specifications

Core information

Product name
DIODES DMN3051L-7
Type
DIODES
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
DMN3051L-7
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.028g
Electronic Component
1
Electronic Component
BM0222748937
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.4W
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：DMN3051L-7 N沟道MOSFET

基本信息

DMN3051L-7 是一款由DIODES公司出品的高性能N沟道金属氧化物半导体场效应管（MOSFET），专为广泛的电子应用而设计。该器件具有工作电压最高可达30V，连续漏极电流可达到5.8A，适合高效电源管理及开关应用。

关键规格

  • 漏源电压（Vdss）: 30V
  • 连续漏极电流（Id）: 5.8A（在25°C环境下）
  • 栅源极阈值电压（Vgs(th)）: 2.2V @ 250µA
  • 漏源导通电阻（Rds(on)）: 38mΩ @ 5.8A, 10V
  • 最大功率耗散: 700mW（在25°C环境下）
  • 工作温度范围: -55°C ~ 150°C
  • 驱动电压: 4.5V, 10V
  • 封装类型: SOT-23-3

技术优势

  1. 高效率: DMN3051L-7 的低导通电阻（38mΩ）确保了在高电流负载情况下的高能效，降低了功耗和发热，适合用于需要长期稳定性能的应用。

  2. 广泛的电压和温度范围: 该器件能够在-55°C至150°C的宽广温度范围内正常工作，提供了优秀的适应性，可应用于外部环境较为恶劣的场景。

  3. 紧凑的封装: SOT-23封装设计使其在有限的电路板空间内提供高性能，适用于空间敏感型设计，特别是在便携式和消费类电子产品中。

  4. 易于驱动: 具有较低的栅源极阈值电压和适中的驱动电压要求（4.5V, 10V），使得在各种逻辑电平下均能快速切换，满足高频脉冲操作需求。

应用场景

DMN3051L-7 MOSFET尤其适用于以下应用领域：

  • 电源管理: 充电器、DC-DC转换器、线性稳压器等电源管理系统中，能够有效地控制电流流动，保持高效率。
  • 开关电路: 在电子开关和继电器驱动应用中，提供必要的电流能力，确保稳定的互动控制。
  • 马达驱动: 被广泛应用于小型电机的驱动系统中，用于实现高效的电动机控制。
  • 消费类电子: 用于各种消费电子产品，如智能手机、平板电脑和其他嵌入式设备，有助于提高产品的性能和能效。

结论

DMN3051L-7是一款性能强大的N沟道MOSFET，凭借其优秀的电气特性、广泛的工作温度范围及紧凑的封装设计，适用于多种电子应用，是电源管理、开关电路及马达驱动等领域的理想选择。通过选择DMN3051L-7，工程师和设计师能够在确保可靠性的同时，实现高效能和较低的功耗，为最终产品的性能提升提供强有力支持。

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