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DIODES DMN6068LK3-13 DMN6068LK3
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- DIODES DMN6068LK3-13
- Type
- DIODES
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- DMN6068LK3-13
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.503g
- Electronic Component
- 1
- Electronic Component
- BM0000282679
- Operating Temperature
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：DMN6068LK3-13 N沟道MOSFET
一、基本信息
DMN6068LK3-13是一款高性能的N沟道金属氧化物场效应管（MOSFET），专为要求高效能和可靠性的应用场景而设计。该MOSFET具有60V的漏源电压（Vdss）和6A的连续漏极电流（Id），在广泛的电源管理、开关电源、马达控制以及电压转换等应用中表现出色。作为美台（DIODES）品牌的产品，DMN6068LK3-13以其优越的电性能和广泛的适用性在市场上赢得了良好的口碑。
二、主要参数
漏源电压（Vdss）: 该器件的最大漏源电压为60V，能够轻松应对在各种工业和消费类电子设备中常见的电压水平。
连续漏极电流（Id）: DMN6068LK3-13的最大连续漏极电流为6A（在25°C时），适合多种高功率的开关应用。
栅源极阈值电压: 其栅源极阈值电压为3V @ 250µA，确保在较低电压下即可达到导通状态。
漏源导通电阻（Rds(on)）: 在10V的栅电压下，漏源导通电阻为68mΩ（@ 12A）。低导通电阻有效降低了功率损耗，提高了系统效率。
功率耗散: 最大功率耗散为2.12W（在环境温度25°C下），为了良好散热和稳定工作，设计时需考虑散热设计。
工作温度范围: DMN6068LK3-13支持在-55°C至150°C的工作环境，适用于严苛的工业应用和高温环境。
安装类型: 产品采用表面贴装型（SMD）设计，便于自动化贴装工艺，可大幅提高生产效率。
三、封装与引脚配置
DMN6068LK3-13采用TO-252（DPAK）封装形式。此封装不仅提供了良好的电气性能，还具备出色的散热能力，适合高功率密度设计。TO-252封装占用空间较小，使得在紧凑的电路板设计中也能轻松集成。
四、应用场景
DMN6068LK3-13被广泛运用于以下领域：
电源管理: 适合用于开关电源(SMPS)，直流调节器，和电池管理系统中，配置成开关管理器件以提升系统效率。
马达控制: 可用于直流电机和步进电机驱动，帮助实现平稳控制与高效能转换。
LED驱动: 适用于LED照明和信号灯驱动，凭借其低Rds(on)和高电流能力，能够有效提高照明设备的性能与寿命。
家电产品: 由于其广泛的工作温度范围，DMN6068LK3-13也适用于冰箱、洗衣机和其他家电产品中。
五、总结
DMN6068LK3-13 N沟道MOSFET是一个高效、可靠的电子元器件，适合多种应用场合。其60V的漏源电压、6A的漏极电流和低导通电阻为电源设计和能量转换提供了强大支持。高工作温度和坚固的封装设计确保了在不同工作环境下的可靠性及稳定性，满足用户对于高性能MOSFET的多样化需求。无论是在工业自动化、通信设备还是消费电子产品中，DMN6068LK3-13都能够实现高效能和良好散热，是现代电子设计的理想选择。
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