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DIODES DMP22D4UFA-7B DMP22D4UFA
Configuration
1 options
Configuration
21+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIODES DMP22D4UFA-7B
- Type
- DIODES
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- DMP22D4UFA-7B
- Electronic Component
- 1
- Package
- X2-DFN0806-3
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.007g
- Electronic Component
- 1
- Electronic Component
- BM69414064
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 400mW
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DMP22D4UFA-7B 产品概述
DMP22D4UFA-7B 是由 DIODES（美台）公司生产的一款高性能 P 通道 MOSFET（场效应管），其设计旨在满足各种现代电子设备的需求，具有广泛的应用潜力。此 MOSFET 主要适用于低压开关电源、负载开关、以及其他需要高效率的电路中，尤其在功率管理和电池驱动的设备中表现尤为突出。
基本参数
DMP22D4UFA-7B 的主要特性包括：
- FET 类型：P 通道，这使得它适用于通过负压控制来开关电源的电路设计。
- 技术：MOSFET（金属氧化物半导体场效应管），具备快速开关能力和低导通阻抗，有效提升电路整体效率。
- 漏源电压（Vdss）：20V，支持低电压环境下的稳定工作。
- 连续漏极电流（Id）：在 25°C 环境下，电流可达 330mA（Ta），适合多种负载应用。
- 导通电阻（Rds On）：在不同工作条件下，最大导通电阻为 1.9 欧姆，理论能耗较低。
- 阈值电压（Vgs(th)）：最大值为 1V @ 250µA，有利于在较低电压下即可实现开关操作。
- 输入电容（Ciss）：最大值为 28.7pF @ 15V，提供良好的频响性能。
- 功率耗散（Pd）：最大 400mW，这保证了在高负载时的可靠性。
- 工作温度范围：-55°C ~ 150°C，适合在极端环境下工作，能够广泛应用于汽车电子和工业控制等领域。
- 封装类型：3-DFN0806H4，表面贴装特性使其适合高密度的 PCB 设计，节省空间并简化制造流程。
应用场景
得益于其出色的电气性能与宽广的环境适应性，DMP22D4UFA-7B 可广泛应用于多个领域，包括：
电源管理：尤其是在便携式设备中，如智能手机、平板电脑及便携式音响等，能够高效调节和分配电源，提高整体能效。
负载开关：其阈值电压低，能够高效控制负载，例如在LED驱动电路中，提供可靠的开关解决方案。
电池驱动设备：对于需要支持开关控制的大功率负载，能够有效管理电池的供电，提高设备的使用时间。
过压和过流保护：凭借出色的低导通阻抗，DMP22D4UFA-7B 也可被用于各种保护电路，确保系统的稳定性与安全性。
结论
DMP22D4UFA-7B 是一款高效能的 P 通道 MOSFET，具备卓越的电气特性，能广泛应用于各类电子设备中。其极宽的工作温度范围和小巧的封装设计使该产品在极端环境下的可靠性得到保障，适合现代电子产品中对空间、效率与安全性的高要求。选择 DMP22D4UFA-7B，将是实现系统高效能与可靠性的理想选择。无论是设计新产品还是升级现有系统，此 MOSFET 都能够满足当今市场的严格要求。
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