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DIODES SF1GDF-13 SF1GDF
Configuration
1 options
Configuration
22+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIODES SF1GDF-13
- Type
- DIODES
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- SF1GDF-13
- Electronic Component
- 1
- Package
- SMD
- Electronic Component
- Switch Diode
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0107672290
- Current
- 1A
- Current(Ir)
- 5uA@400V
- (Vf)
- 1.3V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
- Voltage Rating(Vr)
- 400V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：SF1GDF-13 开关二极管
概述
SF1GDF-13是一款高性能的开关二极管，专为需要快速反向恢复及高电压操作的应用设计。该器件由DIODES（美台）生产，采用了先进的半导体工艺，能够在广泛的工业和消费电子领域中发挥关键作用。该产品适用于各种电力管理、电源转换、开关电源以及高压应用场景，为各类电路提供可靠的解决方案。
基本参数
二极管类型：SF1GDF-13是一款标准类型开关二极管，适用于快速开关和整流应用。
反向电压（Vr）：该二极管的最大反向电压为400V，使其能够应对高电压应用，提供卓越的耐压性能。
平均整流电流（Io）：具有1A的平均整流电流能力，确保在日常运行条件下的良好性能。
正向电压（Vf）：在1A的工作条件下，其正向电压为1.3V，这保证了在整流过程中能量损耗最小化。
速度：SF1GDF-13的快速恢复特性，让其在大于200mA的负载下，恢复时间小于500ns，适合高频应用。
反向恢复时间（trr）：其反向恢复时间为35ns，能够进一步提升开关效率，适合需要高频切换的电路设计。
反向泄漏电流：在400V的反向电压下，反向泄漏电流仅为5µA，大大减少了在高压条件下可能出现的功耗。
电容特性：在4V和1MHz下，电容值为20pF，符合高频特性要求。
安装类型：采用表面贴装型(SMD)设计，方便自动化生产与焊接，提高组装效率。
封装类型：该产品使用D-Flat封装，具备紧凑的尺寸与优良的散热性能，适用于空间受限的应用场合。
工作温度范围：SF1GDF-13的工作结温范围为-55°C ~ 150°C，确保其在广泛环境条件下，依然能够保持优秀的电气性能与可靠性。
应用场景
SF1GDF-13广泛应用于各种电子设备和电源系统，包括但不限于：
- 开关电源：在AC/DC和DC/DC转换器中起到整流和保护作用。
- 电力管理系统：提供高效的开关控制。
- 工业设备：在高电压环境下的应用，保证设备安全可靠工作。
- 消费电子：如电池充电器、适配器等，适合需要快速充放电的设备。
- 汽车电子：用于电源管理和信号整流，确保汽车电气系统的稳定性。
总结
SF1GDF-13是一款经过精心设计的开关二极管，结合了高电压处理能力和快速恢复性能，适合作为各类电子设备及电力系统的重要组成部分。凭借其低反向泄漏电流与广泛的工作温度范围，SF1GDF-13不仅为高效能提供了保障，还为设计工程师在产品集成时带来了更多的灵活性与便利。无论是在工业还是消费领域，SF1GDF-13都能够满足现代电子产品对高效、可靠和耐用性的严格要求。
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