WMSIC Electronic Components

DIODES 74LVC2G07FW4-7 74LVC2G07FW4

Model74LVC2G07FW4-7
PackageTDFN-6(1x1)
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
DIODES 74LVC2G07FW4-7
Type
TDFN-6(1X1)
Unit
Electronic Component
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
74LVC2G07FW4-7
Electronic Component
1
Package
TDFN-6(1x1)
Electronic Component
Buffers / Drivers / Transceivers
Electronic Component
74LVC
Electronic Component
0.03g
Electronic Component
2
Electronic Component
1
Features
Isolated; Level Conversion
Electronic Component
BM0227114143
Operating Temperature
40℃~+125℃
Operating Voltage
1.65V~5.5V
Output Type
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

74LVC2G07FW4-7 产品概述

一、产品简介

74LVC2G07FW4-7 是 DIODES(美台)系列中的双通道 CMOS 数字缓冲器,输出为开漏(open-drain),每通道为单向缓冲。器件工作电压范围宽(1.65V ~ 5.5V),适用于低电压与传统 5V 系统的接口场景。器件采用小尺寸 TDFN-6(1×1 mm,X2-DFN1010-6)封装,适合空间受限的表贴设计。

二、主要电气参数

  • 工作电压(VCC):1.65V ~ 5.5V
  • 通道数:2(双通道)单向缓冲
  • 输出类型:开漏(需外部上拉)
  • 灌电流 IOL:32 mA(可实现较强下拉能力)
  • 静态电流 IQ:典型 10 µA(低静态功耗)
  • 传播延迟 tpd:2.9 ns @ 5V,CL = 50 pF
  • 工作温度范围:-40 ℃ ~ +125 ℃

三、封装与机械信息

  • 封装形式:TDFN-6(1×1 mm,X2-DFN1010-6)小型 DFN 表面贴装
  • 适合高密度 PCB 布局,便于自动贴装与回流焊工艺

四、典型应用场景

  • 电平转换与总线接口:因工作电压范围广,可用于不同电源域间的下拉/开漏接口(需配上拉电阻)
  • 信号线驱动与隔离:用于需要可控下拉的控制或状态信号驱动
  • 外围器件控制:可直接下拉开关型负载或作为片选/中断线的驱动单元(同时注意功耗与热耗散)
  • 嵌入式与移动设备:小封装、低静态电流适合电源受限或体积受限的系统

五、设计与使用注意事项

  • 开漏输出需配置外部上拉电阻,上拉电阻值与上拉电压应根据所需上升时间与功耗平衡选择;若驱动高速信号,应使用较小阻值的上拉或主动上拉方案。
  • 推荐在 VCC 端靠近器件放置去耦电容(例如 0.1 µF),以抑制电源瞬态并保证时序性能。
  • PCB 布局建议缩短关键信号与上拉电阻之间的连线,避免长走线形成寄生电感、电容影响上升/下降沿。
  • 热管理:尽管器件为低功耗设计,但在高频高电流工作(如频繁大电流下拉)时要关注局部热量积累,视情况增加散热通孔或铜箔面积。
  • 参考器件数据手册中的时序、负载与绝对最大额定值,避免超出器件规格范围。

六、优势小结

该器件结合了宽电源电压、较强下拉能力(32 mA)、低静态电流与小尺寸封装,适合需要可靠开漏输出、节省 PCB 面积和低功耗要求的现代电子设计。对需要兼容多电平接口和高密度布局的产品开发尤为合适。

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