WMSIC Electronic Components

DIODES DMN67D8LV-13 DMN67D8LV

ModelDMN67D8LV-13
PackageSOT-563
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 22+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DIODES DMN67D8LV-13
Type
DIODES
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
DMN67D8LV-13
Electronic Component
1
Package
SOT-563
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.026g
Electronic Component
1
Electronic Component
BM0202394102
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
800mW
Electronic Component
Electronic Component
Electronic Component
10000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

DMN67D8LV-13 产品概述

制造商与品牌背景

DMN67D8LV-13是由Diodes Incorporated制造的一款优秀的绝缘栅场效应管(MOSFET)。Diodes Incorporated成立于1959年,长久以来致力于为全球电子市场提供高品质的半导体解决方案。该公司以其创新的产品设计和严格的制造标准而闻名,涵盖了电源管理、信号处理和其他关键电子应用领域。

产品基本信息

  • 产品名称: DMN67D8LV-13
  • 产品类型: 绝缘栅场效应管(MOSFET)
  • 封装类型: SOT563
  • 包装形式: 卷带(TR)
  • 零件状态: 有源
  • 品牌: DIODES(美台)

技术参数

DMN67D8LV-13采用SOT563封装,这种封装形式小巧、便于自动化贴装,适合高密度电路板应用。该MOSFET的关键参数包括其漏极电流、栅源电压、漏源耐压、输入电容等,这些特性决定了其在不同电路中的使用效果。

  • 漏源电压(V_DS): DMN67D8LV-13具有较高的耐压能力,能够在多个应用中承受一定的电压波动。
  • 漏极电流(I_D): 在适用条件下,该MOSFET能提供充足的漏极电流,确保设备高效运行。
  • 开启电压(V_GS(th)): 具有较低的开关阈值,确保其在较低的栅源电压下即可导通,为设计提供灵活性。
  • R_DS(on): 该特性的降低意味着在导通状态下MOSFET的功耗较小,能有效提高整体系统效率。

应用领域

DMN67D8LV-13因其优良的电气特性和小型化设计,广泛应用于多个领域,具体包括但不限于:

  1. 电源管理: 用于开关电源、DC-DC转换器等设备中,提供高效的电能管理方案。
  2. 电机控制: 在电机驱动和控制电路中,DMN67D8LV-13能够实现高效的开关控制,保证电机在各种运行条件下的稳定性与效率。
  3. 消费电子产品: 由于其小型封装特性,适用于便携式设备中的功率开关,如手机、平板电脑和其他移动设备。
  4. 汽车电子: 该MOSFET可用于汽车电源管理、灯光控制以及其他相关应用,适应各种工作环境和温度变化。

竞争优势

DMN67D8LV-13不仅在温度范围和操作效率上表现出色,同时其小型化设计也让其在需要紧凑空间的应用中成为理想选择。作为由Diodes Incorporated生产的产品,该MOSFET受益于制造商的良好声誉和丰富的市场经验。此外,Diodes的持续技术创新和对客户需求的敏锐把握使得DMN67D8LV-13具备了较强的市场竞争力。

结论

总而言之,DMN67D8LV-13是一款在多个电子应用中都能发挥优越性能的绝缘栅场效应管(MOSFET)。其优异的设计和广泛的适用性使其成为各种电源管理及开关控制应用的理想选择,无论是在消费电子、工业设备还是汽车电子领域,DMN67D8LV-13都能够帮助设计工程师实现高效、可靠的电路设计。选择DMN67D8LV-13,您可以获得创新、质量和性能的三重保障。

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