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DIODES P4SMAJ8.0ADF-13 P4SMAJ8.0ADF
Configuration
1 options
Configuration
22+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIODES P4SMAJ8.0ADF-13
- Type
- DIODES
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- P4SMAJ8.0ADF-13
- Electronic Component
- 1
- Package
- D-FLAT
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.061g
- Electronic Component
- 1
- Electronic Component
- BM0202394322
- Operating Temperature
- 55℃~+150℃
- Voltage
- 13.6V
- Electronic Component
- IEC 61000-4-2
- Voltage(VBR)
- 8.89V
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：P4SMAJ8.0ADF-13
一、基本信息
P4SMAJ8.0ADF-13 是由 Diodes Incorporated 生产的一款高性能齐纳二极管，专为瞬态电压抑制（Transil）应用而设计，主要用于保护电子电路免受过电压击穿的影响。该器件采用表面贴装型（SMD）封装，封装形式为 D-Flat，提供简单方便的安装方式。
二、产品特点
1. 反向电压特性： P4SMAJ8.0ADF-13 的典型反向电压为 8V，且其最小击穿电压为 8.89V。这使得该器件在提供过电压保护时，能够有效地抑制电压峰值，同时保持在安全工作区域内。
2. 瞬态响应能力： 该二极管具有卓越的瞬态反应能力，能承受高达 29.4A 的峰值脉冲电流（在 10/1000µs 的脉冲宽度下），以及峰值脉冲功率达到 400W。这使其能够有效地处理短时间内的电压冲击，如静电放电（ESD）、电浪涌等现象。
3. 工作温度范围： P4SMAJ8.0ADF-13 的工作温度范围为 -55°C 至 150°C（TJ），这使得其可适应多种恶劣环境条件，以及符合高温应用的需要。在高温下工作时，器件仍能保持其电气性能，保证了电路的稳定运行。
4. 封装与安装： 该器件采用卷带（TR）包装，便于自动化贴片作业，减少人工操作，提升生产效率。其 D-Flat 的封装形式也设计得十分紧凑，有助于降低在板上的占用空间，适应日渐紧凑的电路设计要求。
5. 单向通道设计： P4SMAJ8.0ADF-13 为单向通道设计，这意味着它只允许电流在一个方向上流动，使其特别适合防止正向过电压出现，增加了设备的保护性能。
三、应用场景
P4SMAJ8.0ADF-13 广泛应用于需要可靠电压保护的电子设备中，例如：
- 消费电子产品： 电视、音响、手机等日常电子产品，防止因电源波动或电气干扰造成的损坏。
- 工业自动化设备： 控制系统、传感器和执行器等行业应用，确保长时间稳定运行，防止意外的电气损害。
- 通信设备： 路由器、交换机等网络设备，保护领域中的关键设备，防止瞬态电压对设备的损害。
- 汽车电子： 用于汽车电子控制单元（ECU），提高其抗干扰能力，确保其可靠性与稳定性。
四、总结
作为一款高效、可靠的瞬态电压抑制二极管，P4SMAJ8.0ADF-13 提供了卓越的过电压保护性能，适用于多种场景。其广泛的工作温度范围、优越的脉冲电流承受能力以及紧凑的封装设计，均为其在现代电子设计中提供了良好的适用性和可靠性。选择 P4SMAJ8.0ADF-13 是实现电子设备安全和可靠性的明智选择。
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