WMSIC Electronic Components

DIODES DMN67D8LT-13 DMN67D8LT

ModelDMN67D8LT-13
PackageSOT-523
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 22+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DIODES DMN67D8LT-13
Type
DIODES
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
DMN67D8LT-13
Electronic Component
1
Package
SOT-523
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.023g
Electronic Component
1
Electronic Component
BM0084328154
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
260mW
Electronic Component
Electronic Component
Electronic Component
10000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:DMN67D8LT-13

1. 引言

DMN67D8LT-13是由Diodes Incorporated生产的一款高性能N沟道场效应管(MOSFET),广泛应用于多种电子电路中。其主要特点包括低功率损耗、适中的电压和电流规格,适合在各种要求电源管理的场合使用。在这一技术文档中,我们将详细介绍DMN67D8LT-13的关键参数、应用领域以及其在现代电子产品中的优势。

2. 基础参数

  • 制造商:Diodes Incorporated
  • 零件状态:有源
  • 包装:卷带(TR),便于自动化生产线的安装
  • 描述:N沟道MOSFET,额定功率260mW,最大工作电压60V,最大电流容量210mA
  • 封装:SOT-523小型封装

3. 主要技术规格

  • 最大漏源电压(V_DS):60V。该参数保证了MOSFET在高电压环境中能够稳定工作,适合用于高压电路。
  • 最大漏电流(I_D):210mA。相对较高的漏电流容量使得DMN67D8LT-13能够处理较大的负载,适合在多种电气负载场景中使用。
  • 功率耗散:260mW。在确保电流通过MOSFET时,能够有效控制发热,增强系统的稳定性和可靠性。
  • 门源电压(V_GS):通常在±20V范围内工作,保证了对大多数信号源的兼容性。

4. 特性与优势

DMN67D8LT-13作为N沟道MOSFET,具有以下几个显著优势:

  • 高效能转化:该MOSFET采用先进的半导体材料和设计,具有较低的导通电阻 (R_DS(on)),从而减少功率损耗,提高电路效率。
  • 超小封装尺寸:SOT-523封装小巧而紧凑,适合高密度的电路板设计。这一特性使得其在便携式设备中尤其受欢迎,因其能够有效节省电路板空间。
  • 宽广的应用范围:DMN67D8LT-13可被应用于负载开关、驱动电源、同步整流、DC-DC转换器等多种电源管理场合。

5. 应用场景

由于DMN67D8LT-13的诸多优良特性,该元器件适用的应用场景非常广泛,包括但不限于:

  • 便携式设备:智能手机、平板电脑及其他便携式电子设备中的电源控制与管理。
  • 计算机及周边设备:用于各种计算机外设的开关电源或电源供应调节。
  • 消费电子:如音响设备中的功率调节、灯光装置的开关控制等。
  • 工业自动化:各种传感器和执行机构的驱动控制。

6. 总结

DMN67D8LT-13是一款功能强大且高效能的N沟道MOSFET,具备出色的电气性能,能够处理高电压和电流,适合多种电子应用。选择DMN67D8LT-13不仅能够提升系统的稳定性和效率,还能根据市场需求不断扩展其应用范围。这使得DMN67D8LT-13成为当今电子设计中不可或缺的一部分,成为工程师实现电源管理和控制的理想选择。

在未来的设计中,随着对功率效率和体积优化的持续追求,DMN67D8LT-13将在更多的领域中展现其价值。

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