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DIODES P4SMAJ11ADF-13 P4SMAJ11ADF
Configuration
1 options
Configuration
22+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIODES P4SMAJ11ADF-13
- Type
- DIODES
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- P4SMAJ11ADF-13
- Electronic Component
- 1
- Package
- D-FLAT
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.061g
- Electronic Component
- 1
- Electronic Component
- BM0127477526
- Operating Temperature
- 55℃~+150℃
- Voltage
- 19.9V
- Electronic Component
- IEC 61000-4-2
- Current(Ir)
- 1uA
- Voltage(VBR)
- 14.7V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：P4SMAJ11ADF-13 TVS二极管
一、产品简介
P4SMAJ11ADF-13是一款由Diodes Incorporated生产的表面贴装型TVS（瞬态电压抑制）二极管，采用D-Flat（DFLAT）封装，专为保护敏感电子设备免受高电压瞬态（如静电放电或电涌）冲击而设计。该设备具有较高的击穿电压和优异的瞬态电流处理能力，适合在广泛的环境和应用场景中使用。
二、技术规格
- 制造商：Diodes Incorporated
- 封装类型：D-Flat
- 颗粒状态：有源
- 类型：齐纳二极管
- 典型反向断态电压：11V
- 最小击穿电压：12.2V
- 最大箝位电压（不同Ipp时）：18.2V
- 峰值脉冲电流（10/1000µs）：22A
- 峰值脉冲功率：400W
- 电源线路保护：无
- 工作温度范围：-55°C至150°C
- 单向通道：1
三、产品特点
高反向电压能力：P4SMAJ11ADF-13的典型反向断态电压为11V，最小击穿电压为12.2V，这确保在正常工作条件下不会触发，从而保证系统的稳定性和安全性。
优异的瞬态抑制性能：该器件的瞬态特性使其能够处理高达22A的峰值脉冲电流，以及最高400W的峰值脉冲功率，能够有效抵御瞬态电压尖峰，减小对电子电路的损坏风险。
宽广的工作温度范围：从-55°C到150°C的工作温度范围，使得P4SMAJ11ADF-13在极端环境下也能保持可靠的性能，适用于军事、航空航天、工业设备等领域。
表面贴装设计：D-Flat封装使得本器件适合于表面贴装技术（SMT），便于实现高密度的PCB设计，降低了整体产品的制造成本和体积。
四、应用领域
P4SMAJ11ADF-13广泛应用于各种需要电压保护的场合，包括但不限于：
- 消费电子：智能手机、平板电脑及其外设
- 通信设备：路由器、交换机及基站设备
- 工业自动化：传感器、PLC控制系统等
- 汽车电子：电动汽车充电设备、车载电子系统
- 医疗设备：监测设备、医疗仪器等
五、总结
综上所述，P4SMAJ11ADF-13是一款性能优越的TVS二极管，具有较高的电压承受能力和瞬态电流处理能力，能够为各种电子设备提供可靠的保护。其广泛的应用场景和出色的工作性能，使其成为设计工程师在选择瞬态电压抑制解决方案时的优先考虑器件。无论是在消费电子、通信设备、工业控制还是汽车电子等领域，P4SMAJ11ADF-13都展现出其价值与重要性，为现代电子产品的可靠性提供了有力保障。
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