WMSIC Electronic Components

DIODES DMN33D8LTQ-13 DMN33D8LTQ

DIODES DMN33D8LTQ-13 DMN33D8LTQ
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Product image

ModelDMN33D8LTQ-13
PackageSOT-523
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 21+

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Technical data

Product details

19 specifications

Core information

Product name
DIODES DMN33D8LTQ-13
Type
DIODES
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
DMN33D8LTQ-13
Electronic Component
1
Package
SOT-523
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.049g
Electronic Component
1
Electronic Component
BM0000744216
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
10000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

DMN33D8LTQ-13 产品概述

DMN33D8LTQ-13 是一款高性能的 N 通道金属氧化物场效应管（MOSFET），由知名电子元器件制造商 DIODES（美台）生产。该器件封装采用 SOT-523，适合表面贴装（SMD）应用，具有体积小、重量轻等优势，是现代电子设备设计中不可或缺的重要元器件之一。

核心特性

  1. 电压与电流规格:

    • 漏源电压（Vdss）高达 30V，保证了在较高电压条件下的稳定运行。
    • 连续漏极电流（Id）可达 115mA，满足大多数低功耗应用的需求。

  2. 导通性能:

    • 驱动电压下的导通电阻（Rds On）分别在 2.5V 和 4V 处达到最小值，最坏情况下为 5 欧姆 @ 10mA，4V。低 Rds On 值意味着在导通状态下，MOSFET 的功耗较低，有效提高整体电能利用率。

  3. 阈值电压:

    • 不同 Id 下的栅极阈值电压（Vgs(th)）的最大值为 1.5V @ 100µA，这一阈值的设计使得 MOSFET 可以在较低的栅极电压下稳定导通，从而提高系统的整体效率。

  4. 驱动特性:

    • 栅极电荷（Qg）最大为 0.55nC @ 10V，这对驱动电路的要求较低，使其在快速开关应用中表现出色。

  5. 输入电容:

    • 输入电容（Ciss）最大为 48pF @ 5V，即使在高频应用中，也能够保持较好性能，适合与其他高频元器件配合使用。

  6. 温度与功率:

    • 工作温度范围广泛，从 -55°C 到 150°C，适应于各种极端环境条件。
    • 最大功率耗散为 240mW @ Ta，这意味着在合理的工作条件下，该器件可以有效地散热，确保稳定运行。

应用领域

DMN33D8LTQ-13 适用于多种电子电路和设备，特别是在要求低功耗、紧凑型设计的场合。其主要应用领域包括但不限于：

  • 电源管理：在 DC-DC 转换器和其他电源调节电路中，作为开关元件使用。
  • 小型电机驱动：在低功率电机驱动和控制系统中，作为电机控制开关。
  • 自动化设备：在自动化控制和智能家居产品中，作为信号放大和开关控制元件。
  • 便携式设备：广泛应用于手机、平板电脑及可穿戴设备等便携式电子产品，因其小巧的封装和高性能。
  • 汽车电子：在各种汽车电子控制单元中，作为开关元件和驱动器使用，提升汽车的智能化与自动化水平。

总结

DMN33D8LTQ-13 作为一款高效能、高可靠性的 N 通道 MOSFET，凭借其出色的电气性能和温度适应性，成为众多电子设计工程师心中的优选零件。无论是在电源管理、自动化设备还是便携式电子产品中，它都能够实现卓越的功能，为系统提供更为可靠的支持。该器件的出现，不仅提升了电子设备的性能，还促进了更为先进和复杂的电子系统的开发。

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