WMSIC Electronic Components

DIODES DMP21D0UFB4-7B DMP21D0UFB4

ModelDMP21D0UFB4-7B
PackageX2-DFN1006-3
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
DIODES DMP21D0UFB4-7B
Type
DIODES
Unit
Electronic Component
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
DMP21D0UFB4-7B
Electronic Component
1
Package
X2-DFN1006-3
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.05g
Electronic Component
1
Electronic Component
BM0000282688
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
430mW
Electronic Component
Electronic Component
Electronic Component
10000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:DMP21D0UFB4-7B

DMP21D0UFB4-7B是一款高性能的P沟道金属氧化物半导体场效应晶体管(MOSFET),广泛应用于各类电子电路中,为实现高效能和低功耗的电源管理与信号调节提供解决方案。该器件采用了表面贴装型(SMD)封装技术,适合现代电子设备的小型化和高集成度需求。其主要特性包括:漏源电压(Vdss)为20V,持续漏极电流(Id)为770mA,漏源导通电阻(Rds(on))在最大400mA时为495mΩ,具有优越的负载能力和低能耗特性。

1. 电气特性

DMP21D0UFB4-7B的电气特性使其在各种应用中表现出色。该器件的漏源电压为20V,这意味着它能够承受高达20V的电压,同时保持其工作稳定性。其连续漏极电流为770mA,意味着它在该温度下能够稳定工作,满足多种功率需求。

在性能方面,该MOSFET的栅源极阈值电压(Vgs(th))为700mV @ 250µA,这使得其能够在较低的驱动电压下迅速进入导通状态,适合需要快速开关的应用场景。同时,DMP21D0UFB4-7B的漏源导通电阻为495mΩ @ 400mA,4.5V,这对于要求较少功率损耗的应用场景而言是一个理想的选择。

2. 功率与热特性

在功率方面,DMP21D0UFB4-7B具有430mW的最大功率耗散,这是在25°C时的性能特征。该特性使得该器件能够有效管理热量,适合高功率应用。在极端工作条件下,DMP21D0UFB4-7B的工作温度范围可达-55°C至150°C,确保其在各种恶劣环境下稳定工作,增强了其在工业和汽车电子设备中的使用潜力。

3. 封装与体积

DMP21D0UFB4-7B采用X2-DFN1006-3封装,具有3-XFDFN结构。这种小型化的封装设计不仅有效地减少了PCB的占用空间,也提高了散热效率。表面贴装技术(SMT)使得该器件可以通过自动化生产线快速安装,大大提升了生产效率。

4. 应用场景

基于其优越的电气特性和高功率管理能力,DMP21D0UFB4-7B广泛应用于电源转换器、开关电源、LED驱动器,以及各类便携式设备和高效能电池管理系统中。除了电源管理外,该MOSFET还可用于过压保护、负载开关和其他需要快速开关功能的应用中,也适用于汽车电子和工业控制等领域。

5. 总结

总体而言,DMP21D0UFB4-7B是一款极具竞争力的P沟道MOSFET,适合要求低功耗、高效率及小型封装的电子设计。其在低导通电阻、较高的漏源电压承受能力和宽广的工作温度范围方面的优秀表现,使得该器件在现代电子应用中成为一种理想选择。DIODES(美台)作为这一产品的品牌,凭借其在半导体领域的强大研发与生产能力,确保了DMP21D0UFB4-7B的高质量和可靠性,为客户提供了坚实的技术保障。

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