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DIODES 1N4001G-T 1N4001G
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIODES 1N4001G-T
- Type
- DO-41
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- 1N4001G-T
- Electronic Component
- 1
- Package
- DO-41
- Electronic Component
- General Purpose Diode
- Electronic Component
- 0.4g
- Electronic Component
- 1
- Electronic Component
- BM0258627087
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5uA@50V
- (Vf)
- 1V@1A
- Electronic Component
- 65℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1N4001G-T 产品概述
一、产品简介
1N4001G-T是一款标准硅整流二极管，广泛应用于电源变换、电源整流、负载驱动等领域。此元器件由DIODES（美台）公司生产，封装类型为DO-41，适合于通孔安装，能够适应各种电路板的布局和设计要求。凭借其良好的性能及稳定性，1N4001G-T在众多电子应用中被广泛使用。
二、技术参数
电流和电压特性
- 最大正向电流 (Io): 1A。这使得该二极管能够承载至少1A的平均整流电流，适合多种低至中功率应用。
- 正向电压 (Vf): 1V @ 1A。在1A的正向电流下，1N4001G-T的正向压降为1V，确保在电路中功耗较低。
- 反向电压 (Vr): 最大50V。这一特性使得该二极管可承受较高的电压，适用于多种电压环境。
频率和恢复特性
- 反向恢复时间 (trr): 2µs。这一参数表明该二极管具备良好的切换特性，适合于应对快速变换的电流模式。
- 不同 Vr 时的反向泄漏电流: 5µA @ 50V。在50V的逆向偏置电压下，反向泄漏电流仅为5µA，这表明其具备较好的绝缘性能。
电容量特性
- 不同 Vr、F 时电容: 8pF @ 4V, 1MHz. 这一电容特性使得1N4001G-T在高频应用中依然能够保持良好的工作稳定性。
工作温度范围
- 结温范围: -65°C ~ 175°C。这样的工作温度范围使得它在恶劣环境下仍能保持稳定的性能表现，不论是在极低还是极高的温度条件下，均符合要求。
三、应用领域
电源电路: 1N4001G-T经常用于整流电路中，将交流电转换为直流电，特别适合低压、低频率的整流任务，广泛应用于室内及交通设施的电源适配器中。
电机驱动: 在电机驱动电路中作为保护二极管使用，防止反向电流对电源供电系统造成损害。
开关电源: 在开关电源中用作整流元器件，能够有效将开关信号转换为稳定的直流电。
充电器: 适合于电池充电器中，用于保护电路并整流。
四、产品优势
高可靠性: 该二极管具备较高的结温范围以及低反向泄漏电流，能够在多种电气环境中可靠工作。
标准化封装: 采用DO-41封装，便于大规模批量生产，支持多种自动化焊接方式，提升了工业应用的效率。
适应性广: 适合多种电气用途，特别是在家用电器、商业设备以及工业机器中表现出色。
五、总结
总体来说，1N4001G-T作为一款标准硅整流二极管，以其优秀的电气特性、广泛的应用范围和高可靠性的特点，成为了许多电子设计不可或缺的组成部分。无论是在日常家电，还是工业应用，1N4001G-T都能为用户提供理想的整流解决方案。如果您在寻求一款稳定且性能良好的标准整流二极管，1N4001G-T绝对是一个值得考虑的选择。
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