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DIODES DMP68D0LFB-7B DMP68D0LFB
Configuration
1 options
Configuration
22+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIODES DMP68D0LFB-7B
- Type
- DIODES
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- DMP68D0LFB-7B
- Electronic Component
- 1
- Package
- X1-DFN1006-3
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.02g
- Electronic Component
- 1
- Electronic Component
- BM0202394126
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.21W
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
- Voltage(Vdss)
- 65V
- Capacitor(Ciss)
- 36pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DMP68D0LFB-7B 产品概述
1. 产品简介
DMP68D0LFB-7B是一款高性能的P沟道场效应管（MOSFET），其具有较低的导通电阻和较高的电压及电流处理能力，适合于多种电源管理和开关应用。此器件由著名的半导体制造商DIODES（美台）生产，属于其高效能MOSFET系列。
2. 产品规格
- 功率等级: 500mW
- 漏源电压（Vds）: 65V
- 漏电流（Id）: 192mA
- 类型: P沟道
- 封装形式: X2-DFN1006-3
3. 主要特点
- 高电压和电流处理能力: 工作电压可达65V，最大漏电流为192mA，能够满足大部分中低压直流和交流应用的需求。
- 较低的导通电阻: 该MOSFET设计提供较低的Rds(on)，这使得在导通时功率损耗降低，有效提升系统的整体效率。
- 紧凑型封装: X2-DFN1006-3封装设计意味着该器件占用较少的电路板空间，非常适合需要高密度布局的应用。
- 优良的热性能: 由于其封装设计以及材料选择，DMP68D0LFB-7B提供优异的散热性能，能在高温环境下可靠工作。
4. 应用领域
DMP68D0LFB-7B广泛应用于如下场景中：
- 电源管理: 在各种电源转换器中，作为开关元件应用，能够高效控制电源的开启和关闭，提供稳定的输出。
- 智能手机和平板电脑: 在移动设备中用于电源开关及充电器应用，由于其小巧的封装和高效能表现，能够提升总体系统性能和电池续航。
- 工业设备: 在各种传感器、执行器和控制器中的信号调节应用，确保设备可靠运行。
5. 性能优势
- 高效能: 由于DMP68D0LFB-7B采用最先进的半导体技术，使其在工作状态下的功耗极低，有助于提高整体设备的能源效率，符合现代节能环保需求。
- 可靠性: 该产品通过严格的安全和质量检测，保证其在各种极端条件下的可靠性，用户可放心使用。
- 易于集成: 得益于DFN封装的设计，能够方便地与其他电子元件集成，简化了电路设计的复杂性，加快产品的上市速度。
6. 结束语
总之，DMP68D0LFB-7B是一款高效、可靠的P沟道场效应管，凭借其优良的性能特点和广泛的适用性，成为了市场上备受推崇的电子元器件之一。适合现代电子设备在高效能和小型化方面的需求，推动着电源管理技术的不断进步。作为设计工程师和开发人员，选择DMP68D0LFB-7B不仅可以提高设计的性能，还能加快产品的上市时间，是值得信赖的解决方案之一。
如需更详细的技术数据及应用建议，欢迎随时联系DIODES的技术支持团队。
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