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DIODES DMP2200UDW-13 DMP2200UDW
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIODES DMP2200UDW-13
- Type
- DIODES
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- DMP2200UDW-13
- Electronic Component
- 1
- Package
- SOT-363
- Electronic Component
- 2 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.02g
- Electronic Component
- 1
- Electronic Component
- BM0258626927
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 600mW
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DMP2200UDW-13 产品概述
产品简介
DMP2200UDW-13 是一款高性能的双极性P沟道场效应管（MOSFET），专为各种低功耗、高效率的应用设计。该器件采用SOT-363封装，具有紧凑的尺寸和优良的热性能。其主要特性包括最大漏极电流可达900mA和最大漏源电压20V，使其非常适合在各种电源管理和开关应用中的使用。
关键参数
- 安装类型: 表面贴装型
- 额定电流 (Id): 连续漏极电流高达900mA，使其能够处理较大的电流负载。
- 导通电阻 (Rds(on)): 在880mA、4.5V电压下，最大导通电阻为260毫欧，这意味着在导通时功耗较低，从而提升整体电路效率。
- 漏源电压 (Vdss): 最高耐压为20V，适用于低压电源应用。
- 工作温度: 广泛的工作温度范围，从-55°C到150°C，适合不同的环境需求。
- 输入电容 (Ciss): 最大值为184pF @ 10V，这对于降低开关损耗和提升开关频率非常重要。
- 栅极电荷 (Qg): 在4.5V下的最大栅极电荷为2.1nC，意味着在驱动方面的要求较低，有助于减小驱动电路的功耗。
- 阈值电压 (Vgs(th)): 最大阈值电压为1.2V，此特性使器件能够在较低的栅极电压下工作，确保更高的线性度和响应速度。
应用领域
DMP2200UDW-13 的多种特性使其广泛应用于许多不同的领域：
- 电源管理: 适用于电源开关、负载开关和电源分配等场景，为电子设备提供高效的电源控制。
- 电池供电设备: 由于其低导通电阻和低栅极驱动电流，它可以延长电池的使用寿命，非常适合便携式设备。
- LED 驱动电路: 该MOSFET的高效率和良好的热性能，使其在LED驱动电路中表现出色。
- 低功耗电子设备: 如传感器、无线通信设备等，能够在保证性能的同时降低功耗。
性能优势
- 高效率: 由于其低导通电阻，DMP2200UDW-13 能够在高电流下维持低功耗，这对于现代节能电子产品尤为重要。
- 广泛的工作温度: 它的工作温度范围使其能够适应许多工业和消费类应用的苛刻环境条件。
- 紧凑的封装: SOT-363封装使其占用空间小，非常适合空间受限的应用场合，能够在小型化设计中提供更好的适应性。
结论
总的来说，DMP2200UDW-13 是一种性能卓越的P沟道MOSFET，凭借其多种特性和广泛的适用范围，成为设计师在电源管理、负载开关及多种低功耗应用中理想的选择。随着电子产品向更高效、更小型化的发展，DMP2200UDW-13 将在未来的市场中占据一席之地，满足不断增长的市场需求。
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