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DIODES 2N7002VC-7 2N7002VC
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- DIODES 2N7002VC-7
- Type
- DIODES
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- 2N7002VC-7
- Electronic Component
- 1
- Package
- SOT-563
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM69417406
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 150mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：2N7002VC-7
基本概述
2N7002VC-7是一款高性能的双N沟道场效应晶体管（MOSFET），旨在满足广泛的电子应用需求。该器件由知名电子元器件制造商DIODES（美台）生产，以其优良的规格和可靠性而闻名。其具有小型化的SOT-563封装，适合于现代表面贴装电路的设计。
电气特性
2N7002VC-7的额定漏源电压高达60V，提供了良好的电压处理能力，适合于各种高电压应用。其最大连续漏极电流（Id）为280mA，使其能够在多个负载条件下可靠地工作。该器件的导通电阻（RDS(on)）在不同Id和Vgs条件下具有较低的值，最大导通电阻为7.5Ω（@50mA，5V），这有助于减少功率损耗并提高整体效率。
阈值电压
在不同的漏源电压（Vds）下，2N7002VC-7的阈值电压（Vgs(th)）的最大值为2.5V（@250µA），这意味着它在较低的栅极电压下即可开启，适合于低电压和低功耗电路设计。
输入和输出特性
器件的输入电容（Ciss）在25V时最大为50pF，这一特性使其适合于高速开关应用，确保快速的电压响应。其功率额定最大值为150mW，能够满足大多数中等功率应用的需求，而不必担心过热或器件失效。
工作温度范围
2N7002VC-7的工作温度范围为-55°C至150°C（TJ），使其在极端环境条件下仍然能够稳定运行。这一宽广的工作温度范围尤其适合于汽车电子、工业控制和航空航天等高要求的应用领域。
封装与安装
该产品采用SOT-563封装，具有小巧、轻便的设计，便于自动化生产过程中的高密度安装。SOT-563封装的表面贴装型（SMT）特性使其适合于现代电子设备的小型化设计需求。
应用场景
2N7002VC-7广泛应用于各种电子设计中，包括但不限于信号开关、负载开关、ADC/DAC应用、功率管理及驱动电路等。此外，由于其优秀的导通特性和低功耗性能，2N7002VC-7也经常用于电源管理、电机控制和消费电子产品中。
总结
2N7002VC-7是一款出色的双N沟道MOSFET，凭借其优越的电气性能、灵活的应用范围以及可靠的工作环境适应性，成为工程师和设计师们的优选。无论是在设计新产品、优化现有电路，还是应对高温或高压环境，2N7002VC-7都能提供杰出的性能表现，是现代电子设计中不可或缺的重要元器件。
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