WMSIC Electronic Components

DIODES DMN63D1L-13 DMN63D1L

ModelDMN63D1L-13
PackageSOT-23
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DIODES DMN63D1L-13
Type
DIODES
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
DMN63D1L-13
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.026g
Electronic Component
1
Electronic Component
BM0127477743
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
370mW
Electronic Component
Electronic Component
Electronic Component
10000
Voltage(Vdss)
60V
Capacitor(Ciss)
30pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

DMN63D1L-13 产品概述

DMN63D1L-13是由美台(DIODES)生产的一款高性能N通道金属氧化物半导体场效应晶体管(MOSFET),其专门设计用于多种电子电路和设备的开关与放大应用。凭借其优越的电气性能和可靠的工作特性,DMN63D1L-13在消费电子、工业控制以及电源管理等领域中具有广泛的应用。

主要参数与特性

  1. 电气特性

    • 漏源电压(Vdss): 高达60V的漏源电压,使得DMN63D1L-13能够处理较高的电压应用,适用于需要高电压操作的场合。
    • 连续漏极电流(Id): 在25°C的环境温度下,最大额定电流为380mA,满足多个应用中对于电流的需求。
    • 栅源驱动电压(Vgs): 在5V至10V的驱动电压范围内,DMN63D1L-13表现出出色的性能,尤其是在开关操作时,最低可达到的Rds(on)值为2欧姆(@10V, 500mA),这保证了在导通状态下的功率损耗极低,有助于提升整体效率。
  2. 开关特性

    • 门极阈值电压(Vgs(th)): 最大阈值电压为2.5V(@1mA),显著降低了设备驱动电路的复杂度。
    • 门极电荷(Qg): 最大门极电荷为0.3nC(@4.5V),降低了开关损耗,提升了驱动电路的性能。
  3. 频率特性

    • 输入电容(Ciss): 最大输入电容为30pF(@25V),使得DMN63D1L-13在高频开关应用中也能够有效工作。
  4. 散热特性

    • 功率耗散: 在环境温度为25°C时,最大功率耗散为370mW,具有良好的散热性能,确保在高负载下的可靠运行。
  5. 工作环境

    • 工作温度范围广泛,从-55°C到150°C,适用于各种复杂和严苛的环境条件。
  6. 封装与安装

    • DMN63D1L-13采用SOT-23小型封装,具有优良的工艺兼容性,支持表面贴装,方便集成到现代电子设备中。

应用场景

DMN63D1L-13因其优良的电气性能和高可靠性,适用于多个领域,包括但不限于:

  • 电源管理: 在开关电源、DC-DC转换器以及线性稳压器中扮演关键角色。
  • 消费电子: 例如便携式设备、计算机外围设备以及家电产品中的开关控制。
  • 工业控制: 在电机驱动、机器人控制以及自动化系统中被广泛使用。

结论

总体来看,DMN63D1L-13是一款适应性强、功耗低、能够在高温和高电压环境中稳定工作的N通道MOSFET,凭借其出色的电气性能和小型化设计,使其极具市场竞争力。无论是在高频开关电路还是在要求高效率的应用中,DMN63D1L-13都是一个理想的选择。通过其稳定的性质与性能,这款元件必定能在各种电子设计中发挥重要作用。

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