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DIODES AH1389-HK4-7 AH1389
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIODES AH1389-HK4-7
- Type
- DIODES
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- AH1389-HK4-7
- Electronic Component
- 1
- Package
- XFDFN-4-EP(1.1x1.4)
- Type
- Electronic Component
- Electronic Component
- Hall Switch
- Electronic Component
- 0.1g
- Electronic Component
- 1
- Features
- Built-in Flip-Flop
- Electronic Component
- BM0227150998
- Operating Temperature
- 40℃~+85℃
- Operating Voltage
- 1.6V~3.6V
- Operating Current
- 4uA
- (Gs)
- 25mT
- (Gs)
- 2mT；2mT
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AH1389-HK4-7 产品概述
一、产品简介
AH1389-HK4-7 是 DIODES（美台）推出的一款线性霍尔传感器，封装为 XFDFN-4-EP（1.1 × 1.4 mm），体积极小、功耗极低，适合空间受限的便携与电池供电应用。器件为单极型（unipolar）线性输出类型，可对外加磁场产生与磁密成比例的模拟响应，用于精确位置与磁场测量。
二、主要参数
- 工作电压：1.6 V ~ 3.6 V
- 工作电流：典型 4 µA（低功耗特性）
- 工作温度：-40 ℃ ~ +85 ℃
- 工作点（Gs）：-25 mT（用户给定）
- 释放点（Gs）：-2 mT；2 mT（用户给定）
- 类型：单极型（对单一极性磁场敏感）
- 封装：XFDFN-4-EP（1.1 × 1.4 mm）
（以上参数以用户提供为准，具体时序/典型曲线建议参考厂商数据手册。）
三、主要特性与优势
- 极低功耗：4 µA 等级，适合长时间电池供电场景。
- 宽电压范围：1.6–3.6 V，可兼容常见单节锂电或 1.8/3.3 V 系统。
- 宽温度范围：工业级温度范围覆盖常见工作环境。
- 小型封装：XFDFN-4-EP 有利于高密度 PCB 布局与小型化产品设计。
- 单极响应：便于与定向磁铁配合，减小误触发概率。
四、典型应用
- 旋钮/滑轨/位置检测（线性位移测量）
- 微型开关与盖磁检测（单极接近检测）
- 电池供电便携设备的低功耗磁场监测
- 小型电机位置与转速检测、编码器辅助传感
- 消费类、工业类位置与接近传感方案
五、封装与电路连接建议
- 裸露热端（EP）建议焊接到地平面以改善散热与电气性能，且有利于 EMI 管理。
- 电源端附近放置 0.1 µF 陶瓷去耦电容，靠近 VCC 与 GND 引脚焊盘。
- 输出为模拟/线性信号时，若后端 ADC 精度敏感，建议在 PCB 上加入低噪放大或滤波网络。
- 注意磁铁极性与传感面方向，单极器件需配合指定极向的磁体才能可靠动作。
六、设计与使用注意事项
- 请以厂商数据手册为准，尤其是工作点、迟滞与温漂等典型曲线；用户提供的工作点/释放点应与样片实测对比确认。
- PCB 布局注意将敏感信号线远离大电流回路和开关噪声源，必要时考虑差分或屏蔽措施。
- 处理与装配时注意 ESD 防护，XFDFN 小封装在回流焊工艺中需控制温度曲线以防封装损伤。
- 若用于安全或关键控制场合，建议加入自检与冗余设计以提高可靠性。
若需要，我可以根据您的具体电路与磁体规格，给出参考原理图、PCB 布局要点和磁体选型建议。
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