WMSIC Electronic Components

DIODES DMN3730U-7 DMN3730U

DIODES DMN3730U-7 DMN3730U
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Product image

ModelDMN3730U-7
PackageSOT-23
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

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Technical data

Product details

20 specifications

Core information

Product name
DIODES DMN3730U-7
Type
DIODES
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
DMN3730U-7
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0000286800
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
710mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

DMN3730U-7 产品概述

1. 概述

DMN3730U-7 是一款高性能的 N 沟道金属氧化物半导体场效应管（MOSFET），专为低功耗、高效率的开关应用而设计。该产品由 DIODES（美台）公司制造，采用紧凑的 SOT-23 封装，适用于对空间有严格要求的电子设备。具有高导通效率和优异的散热能力，DMN3730U-7 是电源管理、信号开关以及各种嵌入式系统的理想选择。

2. 关键规格

  • 漏源电压 (Vdss): 30V
  • 连续漏极电流 (Id): 750mA（在 25°C 时）
  • 栅源阈值电压 (Vgs(th)): 950mV @ 250µA
  • 漏源导通电阻 (Rds(on)): 460mΩ @ 200mA，4.5V
  • 最大功率耗散: 450mW（在 Ta=25°C）
  • 工作温度范围: -55°C 到 150°C（TJ）
  • 封装类型: SOT-23

3. 性能特征

3.1 电气特性

DMN3730U-7 提供优异的开关特性，低 Rds(on) 值使得在导通状态下能够有效降低导通损耗。最大导通电阻为 460mΩ，在 4.5V 的驱动电压下，确保了在应用中不论是电流小于 750mA 的普通情况，还是在更高的工作频率下使用，其导通效率都能保持较高水平。

3.2 适用电压

该 MOSFET 的最大漏源电压为 30V，使得其可以应对大部分小电压电源相关的应用，不易因过压损坏。此外，±8V 的栅源电压限制，保证了在驱动控制时的安全性和可靠性。

3.3 低功耗设计

DMN3730U-7 的设计强调低功耗与高效率。其栅极电荷（Qg）在4.5V 时仅为 1.6nC，极大地减少了驱动电路的功耗。这使得该 MOSFET 在高频应变方向或热载荷条件下表现出色，适合于高效能转换器应用。

4. 应用场景

DMN3730U-7 广泛应用于各类电子产品，如电源管理模块、DC-DC 转换器、LED 驱动器、信号开关、无刷电机控制器及其他移动和固定平台的控制电路中。由于其卓越的耐高温性能和低导通损失，它尤其适合温度变动较大的环境设备，同时也能使用于高频率数据交换的场合。

5. 结论

作为一款低功耗、高效率的 N 沟道 MOSFET，DMN3730U-7 结合了紧凑的 SOT-23 封装与卓越的电气性能，是现代电子电路设计中的优选器件。其出色的开关能力和热管理特性使其在各类产品中具有广泛的应用潜力，无论是在消费电子、工业设备或汽车电子系统中，都能发挥出优异的性能。选择 DMN3730U-7，将为您的设计提供可靠的性能保证和效率提升。

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