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DIODES DMN2056U-13 DMN2056U
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DIODES DMN2056U-13
- Type
- DIODES
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DIODES
- Electronic Component
- DMN2056U-13
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.051g
- Electronic Component
- 1
- Electronic Component
- BM0107672428
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 660mW
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 339pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：DMN2056U-13 MOSFET
DMN2056U-13是一款高性能N通道MOSFET，专为各种电子应用而设计，具有卓越的电气特性和可靠性。作为表面贴装型元器件，该MOSFET被广泛应用于电源管理、负载开关和其他高效能相关设计中，以满足不断增长的电能效率需求。
关键规格
类型与技术：
- DMN2056U-13属于N通道MOSFET，这种类型的FET具有较低的导通电阻，使其在开关应用中更加高效。
- 采用金属氧化物技术，增强了其被广泛使用的灵活性。
电气特性：
- 漏源电压(Vdss)：最大可达20V，这使得该MOSFET适合用于中低电压应用。
- 连续漏电流(Id)：在25°C环境下，可以承受高达4A的电流，适用于电流较大的应用场合。
- 导通电阻：在4.5V Vgs下，导通电阻最大值为38毫欧(在3.6A时测量)，这表明其在导通状态下电力损耗较低，能提高整体系统的能效。
栅极驱动特性：
- 驱动电压(Vgs)的最小值为1.5V，最大值为4.5V，适应多种驱动电平要求。
- 输入电容(Ciss)最大值为339pF（在10V时），这一特性保证了MOSFET在高频应用中的良好性能。
- 栅极电荷(Qg)最大值为4.3nC，表明该器件在开关频率较高的情况下仍能保持较好的响应速度。
温度与功率特性：
- 工作温度范围：该器件的工作温度范围为-55°C至150°C，确保其在极端环境中的稳定运行。
- 功率耗散：最大功率耗散为940mW，提供了良好的热管理性能，有利于维持器件的长久使用。
封装与安装：
- DMN2056U-13采用了SOT-23封装，尺寸小巧，适合高密度电路板设计。该封装方式能够减少PCB占用空间，同时便于自动化贴装，提高生产效率。
应用领域
DMN2056U-13非常适合以下应用：
- 电源管理：在DC-DC转换器、同步整流和其他电源转换应用中，能够提供高效率和低功耗解决方案。
- 负载开关：在灯光控制、马达驱动等自动化设备中，能够快速响应并稳定控制负载。
- 通信设备：其优良的开关特性使其适合用于基站、射频放大器等通信相关设备中。
总结
DMN2056U-13是一款性能卓越的N通道MOSFET，凭借其低导通电阻、高电流承载能力及广泛的温度范围，成为现代电子设备中不可或缺的元器件。其适应性强、应用广泛的特点使其在各类应用中都表现出色。针对高效率和高可靠性的需求，DMN2056U-13无疑是工程设计师和研发人员的理想选择。
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