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DOWO RB521S30T1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO RB521S30T1G
- Type
- DOWO
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- RB521S30T1G
- Electronic Component
- 1
- Package
- SOD-523
- Electronic Component
- Schottky Diode
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- BM0228536753
- Current
- 200mA
- Current(Ir)
- 30uA@10V
- (Vf)
- 500mV@200mA
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 30V
- Surge Current (Ifsm)
- 1A
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
RB521S30T1G 产品概述
一、产品简介
RB521S30T1G 是东沃（DOWO）推出的一款小功率肖特基势垒二极管，封装为 SOD-523（SC-79），专为体积受限且需低压降、快速整流的便携式和消费类电子设计而优化。主要电气参数包括：正向压降 Vf = 0.5V @ 200mA，直流反向耐压 Vr = 30V，最大整流电流 200mA，反向漏电流 Ir = 30µA @ 10V，非重复峰值浪涌电流 Ifsm = 1A。
二、主要特性
- 低正向压降：在 200mA 工作点上 Vf 约 0.5V，降低功耗与发热，提升电源效率。
- 低反向漏流：10V 时 Ir 典型值 30µA，适合电源管理与待机电流敏感场合。
- 快速开关：肖特基结构天然无恢复延迟，适合高频整流与快速切换应用。
- 极小封装：SOD-523 占板面积小，适用于空间受限的移动设备与小型模块。
- 合理的浪涌能力：Ifsm 达 1A，可承受短时启动或浪涌脉冲。
三、典型应用场景
- 便携式电源与充电器中的反向保护或整流。
- DC-DC 降压/升压电源的输出整流与续流保护。
- 电池管理与电源切换（OR-ing）电路，降低备用电源切换损耗。
- 信号链中的钳位保护与低电压降整流场合。
- 空间受限的消费类电子、可穿戴设备与物联网终端。
四、封装与热性能提示
SOD-523 为极小型表贴封装，适合高密度 PCB 布局。由于封装体积小，器件的散热能力有限，建议在连续靠近额定电流工作时注意热管理与良好的 PCB 散热设计（增加铜箔面积或热 vias）。遇到较大占空比或持续电流时，应进行必要的电流/温升评估并考虑并联或选用更大封装产品。
五、设计与使用建议
- 在 200mA 附近工作时，关注 Vf 导致的功耗：P ≈ Vf × I。
- 对于脉冲浪涌，应确保脉冲宽度与频率满足 Ifsm 规定的测试条件，否则需留有裕度。
- 对敏感待机电流电路，注意反向漏流随温度升高而增加的特性，必要时在规格表查阅温度对 Ir 的影响曲线。
- 焊接工艺建议遵循常见的回流温度曲线规范，避免超出封装允许的热应力范围。
六、可靠性与选型要点
该型号适合小电流、高频率、追求低压降与小尺寸的应用。若系统需要更高的反向耐压或持续电流能力，可考虑更高 Vr 或更大封装的肖特基件。选型时请参考完整数据手册以获取温度系数、极限参数和封装机械图。
如需样片、封装尺寸图或更详细的绝对最大额定值及温度特性曲线，请联系 DOWO（东沃）或其授权分销渠道索取 RB521S30T1G 的完整数据手册。
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