WMSIC Electronic Components

DOWO NUP2105LT1G

ModelNUP2105LT1G
PackageSOT-23
BrandDOWO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DOWO NUP2105LT1G
Type
DOWO
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DOWO
Electronic Component
NUP2105LT1G
Electronic Component
1
Package
SOT-23
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.028g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
30pF
Electronic Component
BM0230239725
Operating Temperature
55℃~+125℃
Voltage
43V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NUP2105LT1G 产品概述

一、产品简介

NUP2105LT1G 是东沃(DOWO)推出的一款双路双向瞬态抑制二极管(TVS),采用 SOT-23 小型封装,专为 24V 工况的电源与信号线瞬态过压保护设计。器件针对雷击、开关感应及静电放电(ESD)事件提供快速限压能力,满足 IEC 61000-4-2、IEC 61000-4-4 和 IEC 61000-4-5 等抗扰度规范要求,工作温度范围宽(-55℃ ~ +125℃),适合工业级应用环境。

二、主要电气参数

  • 极性:双向(双极性防护,正反向瞬态均可钳位)
  • 反向截止电压 Vrwm:24 V
  • 击穿电压 VBR(min):约 26.7 V
  • 钳位电压 VC:典型约 43 V(在 IPP=8 A、8/20 μs 条件下测试;部分资料标注峰值钳位可达 50 V)
  • 峰值脉冲电流 Ipp:8 A
  • 峰值脉冲功率 Ppp(8/20 μs):420 W(资料中另有 450 W 标称)
  • 反向电流 Ir:200 nA(在 Vrwm 条件下)
  • 结电容 Cj:约 30 pF(每通道)
  • 通道数:双路独立通道
  • 封装:SOT-23
  • 工作温度:-55 ℃ ~ +125 ℃

三、特点与优势

  • 小尺寸、高能量吸收:SOT-23 封装实现对空间受限板级的保护同时支持数百瓦级 8/20 μs 冲击吸收。
  • 双向、双路灵活配置:可保护两路对称信号或两路电源轨,也可并联用于更高能量需求。
  • 低漏电与中等电容:200 nA 的低漏电流适合对静态功耗敏感的系统;30 pF 结电容适用于低至中速数据线(对超高速信号需评估影响)。
  • 工业级鲁棒性:宽温度范围和符合 IEC 测试规范,适合工业、通信与车载辅助电源防护(非核心动力电池场景需遵循系统设计规范)。

四、典型应用场景

  • 24 V 工业控制与自动化设备的电源轨过压保护;
  • 串行/差分通信接口(如 CAN、RS-485)与 I/O 端口防护(需评估结电容对信号完整性的影响);
  • 终端设备、仪表和供电模块的雷电冲击与浪涌保护;
  • 工业接口板、网关与传感器节点的板级浪涌与静电防护。

五、设计与布局建议

  • 布局:TVS 器件应尽量靠近被保护引脚放置,走线尽可能短且宽,以减少寄生电感与提升吸收能力。
  • 热与能量管理:对于频繁冲击或大能量事件的场合,考虑器件与周边铜箔面积配合散热;必要时并联或配合外部熔丝/限流元件以分担能量。
  • 对高速信号:30 pF 结电容会对高频传输产生影响,若用于高速差分对,需验证信号完整性;可在不影响性能的前提下选择屏蔽或差分匹配方案。
  • 保护拓扑:在电源线上优先考虑串联限流/熔断器和接地路径设计,保证浪涌电流有可靠的回流和能量耗散路径。

六、封装与订购信息

  • 封装:SOT-23,适合自动贴片生产工艺;无铅可回流焊兼容。
  • 牌号/型号:NUP2105LT1G(品牌:DOWO 东沃)。
    如需样片或批量采购,建议与供应商确认最新的电气特性曲线(钳位电压随电流变化曲线)、包装形式及可靠性测试报告,以便在具体应用中进行恰当的选型与验证。

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