WMSIC Electronic Components

DOWO PESDNC2FD3V3BS-DW PESDNC2FD3V3BS

ModelPESDNC2FD3V3BS-DW
PackageDFN1006-2L
BrandDOWO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DOWO PESDNC2FD3V3BS-DW
Type
DOWO
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DOWO
Electronic Component
PESDNC2FD3V3BS-DW
Electronic Component
1
Package
DFN1006-2L
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.009g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
10pF
Electronic Component
BM0264254692
Operating Temperature
55℃~+125℃
Voltage
8.5V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PESDNC2FD3V3BS-DW 产品概述

一、产品简介

PESDNC2FD3V3BS-DW(品牌:DOWO/东沃)是一款面向移动终端与便携设备的双向单线ESD浪涌保护二极管,封装为小尺寸 DFN1006-2L。器件设计用于保护 3.3V 信号线,提供快速抑制瞬态过电压能力,同时保持较低的结电容以减少对信号完整性的影响。

二、主要电气参数

  • 极性:双向(Bidirectional)
  • 反向截止电压 VRWM:3.3V(工作电压)
  • 击穿电压 VBR:5.5V
  • 钳位电压(典型):8.5V
  • 峰值脉冲电流 Ipp:8.5A @ 8/20µs
  • 峰值脉冲功率 Ppp:72W @ 8/20µs
  • 反向电流 Ir:100 nA(典型小电流泄漏)
  • 结电容 Cj:10 pF(典型值)
  • 通道数:单路
  • 工作温度范围:-55℃ ~ +125℃
  • 防护等级:符合 IEC 61000-4-2(接触/空气放电 ±30kV)与 IEC 61000-4-5(浪涌 8/20µs)

三、产品特性与优势

  • 双向保护:适合差分或单端双向信号线,在正负方向均能有效夹紧瞬态过电压。
  • 高脉冲承受能力:8.5A/72W(8/20µs)可应对大多数工业级浪涌与静电冲击场景。
  • 低结电容(10 pF):对高速接口与射频信号影响小,适合移动设备和高速数据线。
  • 低漏电流:100 nA 的低反向电流保证在电源敏感的应用中不引入明显静态损耗。
  • 宽温工作范围与小封装:适用于空间受限、温度变化较大的消费电子环境。

四、典型应用

  • 手机与智能终端的外部接口(耳机插孔、USB/数据线接口等)
  • 便携式电子设备、可穿戴设备的I/O保护
  • 需要抗静电抗浪涌的传感器与按键输入线路

五、封装与PCB布局建议

  • 封装:DFN1006-2L,利于自动贴装与高密度设计。
  • 布局建议:器件应尽可能靠近受保护的接口或连接点放置,走线尽量短且宽,保护器到地的回流路径应低阻抗;若有底层地平面,建议在器件附近布置过孔以降低回流感应。
  • 热回流与焊接:遵循DFN封装的回流曲线与公司工艺规范,避免过长高温暴露导致焊点缺陷。

六、注意事项

  • 该器件为单通道保护器,若需要多路保护请并行或选用多通道方案。
  • 钳位电压为典型值,实际钳位随脉冲电流及PCB寄生阻抗有所变化;设计时应留有足够余量,确保下游器件承受范围。
  • 双向器件在单向直流偏置下应注意工作状态,避免误用为单向TVS。
  • 采用前请参考厂方完整数据手册,确认封装尺寸、焊盘图与可靠性测试数据。

PESDNC2FD3V3BS-DW 以其小尺寸、低电容及较高脉冲承受能力,适合在对信号完整性与抗干扰能力要求较高的移动与便携产品中作为第一道浪涌与静电防护元件。

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