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DOWO S1M
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO S1M
- Type
- DOWO
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- S1M
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- General Purpose Diode
- Electronic Component
- 0.122g
- Electronic Component
- 1
- Electronic Component
- BM0264356189
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 1uA@1000V
- (Vf)
- 1.1V@1A
- Electronic Component
- 55℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S1M 产品概述
一、产品简介
S1M 是 DOWO（东沃）推出的一款通用整流二极管，采用 SMA（DO‑214AC）独立式封装，额定直流正向电流 1A，反向耐压达 1000V。器件设计用于中低功率高压整流与保护场合，兼顾可靠性与成本效益，适合各种工业与民用电源应用。
二、主要参数
- 正向压降（Vf）：1.1V @ IF = 1A
- 直流反向耐压（Vr）：1000V（Repetitive Peak Reverse Voltage）
- 正向整流电流（IF）：1A（连续）
- 非重复峰值浪涌电流（Ifsm）：30A（单次浪涌）
- 反向电流（Ir）：1μA @ VR = 1000V
- 工作结温范围：-55℃ ～ +175℃
- 封装：SMA（独立式）
三、器件特性与优势
S1M 在高压耐压能力与低漏电方面表现优良，1000V 的反向耐压和 1μA 的漏电流使其在高压整流、逆电压抑制等应用中可靠性高。正向压降 1.1V 在 1A 电流下能保持较低的功率损耗，配合良好的峰值浪涌能力（30A）可承受启动或短时冲击电流。
四、封装与热管理
SMA 封装适合自动贴装与波峰/回流焊工艺，体积小、散热路径以引脚与基板为主。实际应用中建议在 PCB 设计时为二极管预留适当的铜箔面积以改善散热，并根据工作电流进行额定去额定处理，避免长期接近最大额定值导致结温上升。
五、典型应用场景
- 开关电源整流与次级整流
- 逆变器与电力变换设备的高压整流段
- 充电器与适配器中高压整流与保护
- 工业电源、照明驱动、浪涌抑制与反向保护电路
六、可靠性与使用注意
S1M 适用宽温区（-55℃ 至 +175℃），适合多数苛刻环境应用。器件在焊接与装配时应遵循常规半导体元件焊接工艺，控制焊接温度与时间以防封装受热损伤；存储时避免潮湿与高温，必要时按厂商说明进行干燥处理。设计时应留有安全裕度，考虑反向恢复特性与电磁兼容对系统的影响。
七、订购信息
器件型号：S1M；品牌：DOWO（东沃）；封装：SMA。可根据项目需求向经销商索取完整规格书、师傅资料和可靠性测试报告，以便进行设计验证与批量采购。
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