WMSIC Electronic Components

DOWO ESD5451X

ModelESD5451X
PackageDFN1006-2L
BrandDOWO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DOWO ESD5451X
Type
DOWO
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DOWO
Electronic Component
ESD5451X
Electronic Component
1
Package
DFN1006-2L
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.01g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
15pF
Electronic Component
BM0258760033
Voltage
13V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
500nA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD5451X 产品概述

一、产品简介

ESD5451X 是 DOWO(东沃)推出的一款单路双向瞬态浪涌抑制器,专为对敏感电子接口在静电放电(ESD)和雷击浪涌冲击下提供保护而设计。器件采用小型 DFN1006-2L 封装,具有低结电容和高能量吸收能力,适用于空间受限且对信号完整性有要求的应用场景。

二、主要特性

  • 极性:双向,支持正负极瞬态抑制。
  • 工作反向截止电压(Vrwm):5 V,适合 5 V 类信号线与接口保护。
  • 钳位电压:13 V(典型),在峰值脉冲时有效限制电压幅值。
  • 峰值脉冲电流(Ipp):8 A @ 8/20 μs。
  • 峰值脉冲功率(Ppp):100 W @ 8/20 μs,能量吸收能力强。
  • 击穿电压:6.5 V。
  • 反向电流(Ir):≤ 500 nA(典型测试条件未注明时参照厂方标准)。
  • 结电容(Cj):15 pF,兼顾保护与高速信号传输。
  • 通道数:单路。
  • 防护等级与标准:符合 IEC 61000-4-5(浪涌)与 IEC 61000-4-2(静电放电)要求。

三、典型应用

  • USB、串行通讯接口(如 UART、RS-232/RS-485)及其他 5 V 信号线保护。
  • 移动设备、物联网终端、消费电子与工业控制器的小尺寸防护设计。
  • PCB 边缘 I/O、天线馈线前端或需要双向保护的低压互连。

四、主要技术参数(摘要)

  • 品牌:DOWO(东沃)
  • 型号:ESD5451X
  • 封装:DFN1006-2L(小型贴片)
  • Vrwm:5 V;击穿电压:6.5 V;钳位电压:13 V
  • Ipp:8 A @ 8/20 μs;Ppp:100 W @ 8/20 μs
  • Ir:500 nA;Cj:15 pF;通道数:1 路;极性:双向

五、封装与布局建议

DFN1006-2L 封装体积小,推荐将器件尽量靠近被保护的接口(或连接器)布置,最短路径连接至接地平面。保持走线短且宽,避免在器件与地之间存在长回流路径,以便在瞬态事件发生时快速将能量引入地线。

六、使用注意事项与可靠性

  • 不要超过规定的脉冲电流与功率峰值,以免器件损坏。
  • 反向电流与结电容会随温度与偏压变化,设计时应考虑最差工况。
  • 焊接建议遵循厂方的回流曲线与湿敏等级,避免热应力影响可靠性。
  • 对于极高频或对超低电容有严格要求的接口,应评估 15 pF 对信号完整性的影响。

七、结论

ESD5451X 以其双向保护、较低结电容与较高瞬态吸收能力,为 5 V 级别的接口与信号线提供可靠防护。小体积 DFN1006-2L 封装适合空间受限的应用,是手机、物联网、工业与消费电子设备中常见的静电与浪涌防护方案。若需更详细的典型曲线、封装图与焊接资料,请参照厂商完整数据手册或联系 DOWO(东沃)技术支持。

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