WMSIC Electronic Components

DOWO MMBZ5V6AL

ModelMMBZ5V6AL
PackageSOT-23
BrandDOWO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DOWO MMBZ5V6AL
Type
DOWO
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DOWO
Electronic Component
MMBZ5V6AL
Electronic Component
1
Package
SOT-23
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.016g
Electronic Component
1
Channel Count
Electronic Component
Electronic Component
BM0264801992
Voltage
8V
Electronic Component
IEC 61000-4-2
Current(Ir)
5uA
Voltage(VBR)
5.6V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBZ5V6AL — 双路单向齐纳(ESD)保护二极管产品概述

MMBZ5V6AL 是 DOWO(东沃)出品的一款双片式单向齐纳二极管,针对瞬态过压与静电放电(ESD)保护而优化。器件以 SOT-23 小封装提供双通道保护,具备优异的钳位能力和低漏电流,适合对电压敏感且电路板空间受限的电子设备与信号线防护需求。

一、核心参数一览

  • 极性:单向(Unidirectional)
  • 反向工作电压 Vrwm:3 V
  • 击穿电压 VBR:5.6 V(典型)
  • 钳位电压(Ipp 条件):8 V
  • 峰值脉冲电流 Ipp:3 A
  • 峰值脉冲功率 Ppp:24 W
  • 反向漏电流 Ir(Vrwm 下):5 μA
  • 通道数:双路(双结共阳极设计)
  • 防护等级:符合 IEC 61000-4-2 静电放电要求
  • 类型:ESD/瞬态抑制器(TVS /齐纳)
  • 封装:SOT-23
  • 品牌:DOWO(东沃)

二、产品特性与优点

  1. 高效钳位:在指定峰值脉冲条件下钳位电压约为 8V,能将瞬态电压限制在对下游器件安全的范围内。
  2. 低漏电流:Vrwm 下典型反向电流仅 5 μA,可保持系统静态功耗低,适合电池供电与低功耗设计。
  3. 双路共封装:双结共阳极设计在一个 SOT-23 封装内即可保护两条独立线路,节省 PCB 面积并简化布局。
  4. 单向结构:在正向瞬态发生时,器件像整流二极管一样迅速导通;在反向超过 VBR 时进入齐纳稳压/击穿区进行钳位。
  5. 符合 ESD 标准:设计用于满足 IEC 61000-4-2 静电放电防护要求,适配常见的接触与空气放电事件。

三、典型应用场景

  • 计算机与外设(USB、串口、键盘/鼠标接口)
  • 打印机、POS 机、商用测控设备等工业控制终端
  • 通信设备(收发器、以太网 PHY 前端、射频低速控制线)
  • 医疗设备及仪器(对静电敏感的信号输入/输出端)
  • 便携式与嵌入式系统中需要节省 PCB 面积且需两路独立保护的场合

四、典型电气行为说明

  • 正常工作时:当线路电压低于 Vrwm(3 V)时,器件处于高阻状态,漏电小;系统运行不受影响。
  • 瞬态发生时:当线路遭受高能瞬态(如 ESD 或开关感应)并使电压超过 VBR(≈5.6 V)时,二极管迅速进入击穿区,将过压能量钳位至约 8 V,同时承受峰值电流 3 A/峰值功率 24 W(短脉冲条件下)。
  • 负向瞬态:因器件为单向型,对反向极性瞬态也会表现为整流导通,从而保护电路。

五、封装与布局建议

  • 封装:SOT-23,适用于自动化贴装,便于在空间受限的 PCB 上实现双路保护。
  • 布局建议:保护器件与被保护线路之间保持最短的连接路径;将共阳极引脚尽量靠近参考地或参考电位(按系统连接方式)以最小化回路电感;被保护端与器件之间避免长走线与环路,以提高 ESD 能量传导能力。
  • 热管理:尽管峰值能量可达 24 W(脉冲),SOT-23 的热容量有限,应避免重复承受高能脉冲;在高能环境下考虑并联或外加限流元件分担能量。

六、选型与注意事项

  • 工作电压匹配:Vrwm 为 3V,适用于 3V 类或更低静态电压的敏感线路;若系统工作电压较高,应选择 Vrwm 更高的系列型号。
  • 钳位裕量:钳位电压 8V 在多数低压数字/模拟器件可接受范围内,但对于更低耐压的芯片,仍需评估是否满足保护需求。
  • 峰值能力:Ipp 3A 与 Ppp 24W 为短脉冲参数,非连续功率;在频繁高能冲击场合需考虑器件寿命与散热。
  • 引脚连接:依据电路设计,将共阳极正确连接到系统参考端(如接地或参考电位),以保证保护动作方向性合适。

七、可靠性与合规

MMBZ5V6AL 针对静电放电进行了设计和验证,符合 IEC 61000-4-2 静电防护规范,适合需要通过工业或商用设备抗扰度测试的产品。建议在设计验证阶段对实际产品做 ESD 与浪涌测试,确认在实际布局与连线条件下的保护效果。

八、总结

MMBZ5V6AL 是一款面向板级瞬态过压与 ESD 防护的双路单向齐纳器件,凭借 SOT-23 小封装、低漏电流、高钳位性能以及符合 IEC 61000-4-2 的防护能力,非常适合需要两路独立保护且空间受限的消费电子、通信、医疗及工业设备。设计时建议结合 PCB 布局、能量预算与系统工作电压进行综合评估,以达到最佳保护效果。

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