WMSIC Electronic Components

DOWO BAT46W

ModelBAT46W
PackageSOD-123
BrandDOWO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DOWO BAT46W
Type
DOWO
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DOWO
Electronic Component
BAT46W
Electronic Component
1
Package
SOD-123
Electronic Component
Schottky Diode
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0257247600
Current
350mA
Diode
Electronic Component
Current(Ir)
[email protected];2uA@75V;1uA@50V;500nA@10V
(Vf)
[email protected];1V@250mA;450mV@10mA
Electronic Component
Electronic Component
Electronic Component
3000
Voltage Rating(Vr)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BAT46W 产品概述

BAT46W 是 DOWO(东沃)出品的一款小信号肖特基整流二极管,采用 SOD‑123 表面贴装封装。该器件以低正向压降、快速恢复和体积小巧见长,适合便携设备、检波、保护和小功率整流等场景。以下基于您提供的基础参数,给出该器件的功能特点、关键电气参数、封装与热性能、典型应用以及使用注意事项,便于工程选型与实际设计。

一、主要电气参数(基于给定资料)

  • 二极管配置:独立式(单只器件)
  • 直流反向耐压 Vr:100 V
  • 额定整流电流(平均)IF(AV):350 mA
  • 非重复峰值浪涌电流 Ifsm:750 mA
  • 反向电流 Ir(资料提供):750 mA(见下说明)
  • 封装:SOD‑123
  • 品牌:DOWO(东沃)

说明:资料中给出的反向电流 Ir = 750 mA 与常见二极管参数不符——反向漏电通常是 μA 或 nA 级,而不是 mA 级。若真为 750 mA,则表示在反向电压下器件会产生极大泄漏,基本不适合大多数应用。建议在最终设计前向供应商或数据手册核实 Ir 的真实量级(很可能为 750 μA、750 nA 或其它单位误写)。

二、特性与优势

  • 低正向压降:肖特基结构在同等电流下正向压降低于普通 PN 二极管,有利于降低功耗与发热。
  • 快速开关:肖特基二极管不存在显著的反向恢复电荷,适合高速切换与检测电路。
  • 小体积封装:SOD‑123 封装便于高密度贴装与自动化生产。
  • 中等整流能力:350 mA 的平均整流电流可满足中小功率供电、信号整流与保护电路需求。
  • 峰值浪涌能力:750 mA 的非重复浪涌电流可承受短时突发冲击,如开机浪涌或瞬态尖峰。

三、封装与热性能

  • 封装形式:SOD‑123,适用于回流焊工艺,表面贴装,标识通常在器件一端有极性标记(阴极带)。
  • 焊接建议:遵循无铅回流温度规范(典型 ≤ 260 °C,峰值短时),并按照 PCB 回流曲线控制加热/冷却速率以保证焊点质量。
  • 热阻与散热:SOD‑123 为小型塑封,散热受限。器件在长期工作时需关注结温(Tj)和环境温度,合理设计 PCB 铜箔面积以扩散热量,并在高电流或连续工作场合加大散热区。

四、典型应用场景

  • 便携式电源的小功率整流与续流路径。
  • 射频/检波电路、混频器输出检波等对低 Vf 有利的场合。
  • 过压/反接保护、输入保护和反向极性保护电路(与限流或保险元件配合)。
  • 开关电源辅助电路、逻辑电平保护和信号整形。

五、设计与使用注意事项

  • 核实逆向漏电:如前所述,必须向供应商确认 Ir 的真实数值,判断是否适合高阻抗或检波类应用。
  • 额定与实际安全裕度:在 350 mA 连续整流场合下,应考虑降额使用(如 70–80% 的额定值)并评估结温上升,保证长期可靠性。
  • 峰值冲击:Ifsm 为短时冲击能力,不能作为连续工作指标。若电路存在反复冲击或电源浪涌,考虑更高冲击能力的器件或额外浪涌抑制器件。
  • PCB 布局:为降低自发热和改善散热,建议将器件焊盘与较大铜箔相连,必要时在焊盘下方增加过孔引导热量到多层板的散热层。
  • 温度特性:肖特基二极管的反向特性与温度高度相关,温度升高会显著增加漏电流,应在高温环境下重新评估漏电与功耗。

六、选型与替代建议

  • 若应用对反向漏电敏感(如高阻检波、精密测量),优先选择数据手册中明确低漏电(nA–μA 级)的型号,并要求提供 Ir 在不同 Vr 和温度下的曲线。
  • 若需更高整流电流或更好散热,可考虑 SOD‑123F、SOD‑128 或 SMA 封装的肖特基替代品。
  • 对于需要更高反向耐压或更强浪涌能力的场景,则选型时注意 Vr 与 Ifsm 的匹配,必要时采用 TVS 或更大封装的整流器件。

备注:在正式设计中,务必参考 DOWO 官方数据手册以获取完整的典型值、极限值、温度系数和封装尺寸,并在样机阶段进行实际测量验证。若需要,我可以帮您起草向供应商核实的数据清单或推荐几款可替代的规格型号。

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