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DOWO LMBR1100ET1G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO LMBR1100ET1G
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- LMBR1100ET1G
- Electronic Component
- 1
- Package
- SOD-323HE
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0231033197
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 100uA@100V
- (Vf)
- 950mV@1A
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LMBR1100ET1G 产品概述
一、产品简介
LMBR1100ET1G 是东沃（DOWO）推出的一款小封装整流二极管，采用 SOD-323HE 超小型封装，面向空间受限的便携式和消费类电子设备。器件适合做一般整流、反向保护及开关电源中的续流二极管，兼顾体积小、额定电流与耐压性能。
二、主要电气参数
- 正向压降 Vf：0.95V @ 1.0A（典型测试点），在大电流时产生的功耗需在热设计中考虑。
- 连续整流电流：1A（额定值），用于器件长期运行的基准设计电流。
- 非重复峰值浪涌电流 Ifsm：25A，适用于短时浪涌/冲击电流能力评估（通常按行业浪涌测试标准进行衡量）。
- 直流反向耐压 Vr：100V，适合中等电压场合的反向阻断要求。
- 反向电流 Ir：100µA @ 100V，表明在高反向电压下存在一定的漏泄电流，需要考虑高温时漏电上升的影响。
三、封装与热/机械特性
- 封装：SOD-323HE，体积极小、低外形高度，适合高密度贴装。
- 由于封装热阻相对较大，器件的热量主要通过焊盘与 PCB 传导，建议在 PCB 设计时增大焊盘铜箔面积或布铜散热，以降低结温并提高可靠性。
- 适配自动贴装与回流焊的生产工艺，具体焊接温度曲线请参照厂商数据手册。
四、典型应用场景
- 移动电源、便携式充电器等体积受限的电源整流与反向保护。
- LED 驱动、车载电子（非关键安全电路）、工业控制中的二次侧整流或续流路径。
- 含短时浪涌的电源线路中作为保护元件使用。
五、使用与设计注意事项
- 注意正向压降在 1A 时接近 1V，长时间大电流工作会产生较大功耗（P = Vf·I），应进行热仿真与 PCB 散热设计。
- 反向漏电在高电压及高温条件下会增加，若电路对漏电敏感（例如高阻输入），应评估在工作温度范围内的 Ir 变化。
- Ifsm 指短时非重复浪涌能力，设计时应避免反复或长时浪涌以免损坏器件。
- 严格按极性焊接并遵循 ESD 防护规范，回流焊温度与时间以供应商推荐为准。
六、优势与选型建议
- 优势：在 100V 耐压等级下提供 1A 连续整流能力并兼顾小封装，适合体积受限的中低功率应用。
- 选型建议：若电路经常承受高频开关损耗或高平均电流，建议选用更大封装或具有更低 Vf（降低功耗）与更好散热能力的型号；若需更低反向漏电，可参考低漏电或高温稳定性的专用型号。
如需进一步的电气特性曲线、封装尺寸图或回流焊工艺参数，请参考东沃（DOWO）官方数据手册或联系供应商获取完整规格说明书。
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