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DOWO SD12CT1G
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO SD12CT1G
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- SD12CT1G
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.061g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Electronic Component
- BM0230239727
- Operating Temperature
- 55℃~+125℃
- Voltage
- 20V
- Current(Ir)
- 500nA
- Voltage(VBR)
- 13V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SD12CT1G 产品概述
一、产品简介
SD12CT1G 是东沃（DOWO）出品的一款小型表面贴装瞬态电压抑制器（TVS），属于双向 ESD 保护器件，封装为 SOD-323，单路结构。器件针对瞬态过压和静电放电事件提供快速钳位保护，适用于对体积和封装成本敏感的电路板设计。
二、主要电气参数
- 极性：双向（可对正负瞬态进行对称钳位）
- 反向截止电压 Vrwm：12 V（标称驻留电压）
- 击穿电压：13 V（启动导通的阈值）
- 钳位电压：20 V（在峰值脉冲电流下的典型钳位电压）
- 峰值脉冲电流 Ipp：18 A
- 峰值脉冲功率 Ppp：400 W
- 反向电流 Ir：500 nA（常温下在 Vrwm 条件下的泄漏电流）
- 通道数：单路
- 工作温度范围：-55 ℃ ~ +125 ℃
三、特点与优势
- 小封装（SOD-323），便于高密度贴装与空间受限设计。
- 双向保护，适用于交流或可正/负切换的信号线与接口。
- 400 W 的瞬态吸收能力配合 20 V 的钳位电压，能在较强脉冲下保护下游器件不被击穿。
- 低泄漏电流，适合对待机功耗要求高的系统。
四、典型应用场景
- 各类通信接口与数据线防护（USB、串口、音频/视频接口等）
- 电源线和局部供电轨的瞬态抑制（适合 ±12 V 及以下系统）
- 工业控制、仪器仪表、安防设备的接口保护
- 消费电子及车载电子中对 ESD 和浪涌保护的需求点
五、布局与使用建议
- 器件应尽量靠近受保护的连接器或信号入点布置，以缩短走线并降低感抗引入的振铃。
- 将器件共同地参考点（GND）通过短而粗的回流路径连接到主地平面，必要时使用铺铜和热过孔以提升能量吸收能力。
- 对于双向器件，两端须分别连接到被保护线与地（或对称接地结构），注意电路中是否存在持续直流偏置超过 Vrwm 的情况。
- 在焊接与回流工艺中，按常规 SMD 元件工艺处理，避免过长高温暴露导致器件性能退化。
六、可靠性与存储
- 器件工作温度范围宽，适合工业级应用。
- 存储与运输时避免潮湿及强烈机械冲击，长时间存放建议按厂商供应的包装说明进行密封防潮保存。
- 在高能量脉冲后应检测器件是否受损（如降低钳位能力或泄漏电流异常），必要时更换以保证系统可靠性。
总结：SD12CT1G 以其小型化封装、双向保护和较高的瞬态能量吸收能力，适用于多种需要局部 ESD/浪涌防护的电子系统。在设计中合理布局和接地处理能够最大化其保护效果。若需更详细的标准测试条件和外形尺寸图，请参考厂方数据手册或联系供应商获取原始资料。
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